The resistive switching behaviour of oxygenated amorphous carbon electrochemical metallisation devices is investigated. The effect of temperature on the microstructure and composition of the oxygenated carbon matrix is also investigated by annealing in situ in a transmission electron microscope. The devices exhibit controllable bipolar non-volatile and bi-directional volatile resistive switching behaviour that is dependent on the resistance state of the device and the polarity of the RESET voltage. The characteristics presented suggest suitability for incorporation into neuromorphic computing and memory storage technologies as memory cells, selector devices, or synaptic emulators.
References
1.
H. S. P.
Wong
and S.
Salahuddin
, Nat. Nanotechnol.
10
, 191
(2015
).2.
M.
Di Ventra
and Y. V.
Pershin
, Nat. Phys.
9
, 200
(2013
).3.
A.
Chen
, paper presented at the 2014 IEEE International Conference on IC Design & Technology
, 2014
.4.
D.
Fu
, D.
Xie
, T.
Feng
, C.
Zhang
, J.
Niu
, H.
Qian
, and L.
Liu
, IEEE Electron Device Lett.
32
(6
), 803
(2011
).5.
J.
Xu
, D.
Xie
, T.
Feng
, C.
Zhang
, X.
Zhang
, P.
Peng
, D.
Fu
, H.
Qian
, T.-l.
Ren
, and L.
Liu
, Carbon
75
, 255
(2014
).6.
F.
Kreupl
, R.
Bruchhaus
, P.
Majewski
, J. B.
Philipp
, R.
Symanczyk
, T.
Happ
, C.
Arndt
, M.
Vogt
, R.
Zimmermann
, and A.
Buerke
, paper presented at the Electron Devices Meeting, 2008, IEDM 2008, IEEE International
, 2008
.7.
C. A.
Santini
, A.
Sebastian
, C.
Marchiori
, V. P.
Jonnalagadda
, L.
Dellmann
, W. W.
Koelmans
, M. D.
Rossell
, C. P.
Rossel
, and E.
Eleftheriou
, Nat. Commun.
6
, 8600
(2015
).8.
T.
Bachmann
, W.
Koelmans
, V.
Jonnalagadda
, M.
Le Gallo
, C.
Santini
, A.
Sebastian
, E.
Eleftheriou
, M.
Craciun
, and C.
Wright
, Nanotechnology
29
(3
), 035201
(2018
).9.
Y.-J.
Chen
, K.-C.
Chang
, T.-C.
Chang
, H.-L.
Chen
, T.-F.
Young
, T.-M.
Tsai
, R.
Zhang
, T.-J.
Chu
, J.-F.
Ciou
, and J.-C.
Lou
, IEEE Electron Device Lett.
35
(10
), 1016
(2014
).10.
F.
Zhuge
, W.
Dai
, C.
He
, A.
Wang
, Y.
Liu
, M.
Li
, Y.
Wu
, P.
Cui
, and R.-W.
Li
, Appl. Phys. Lett.
96
(16
), 163505
(2010
).11.
X.
Zhao
, H.
Xu
, Z.
Wang
, L.
Zhang
, J.
Ma
, and Y.
Liu
, Carbon
91
, 38
(2015
).12.
X.
Zhao
, H.
Xu
, Z.
Wang
, Z.
Xu
, C.
Zhang
, G.
Wang
, W.
Liu
, J.
Ma
, and Y.
Liu
, J. Mater. Chem. C
5
(22
), 5420
(2017
).13.
Z.
Wang
, S.
Joshi
, S. E.
Savel'ev
, H.
Jiang
, R.
Midya
, P.
Lin
, M.
Hu
, N.
Ge
, J. P.
Strachan
, Z.
Li
, Q.
Wu
, M.
Barnell
, G.-L.
Li
, H. L.
Xin
, R. S.
Williams
, Q.
Xia
, and J. J.
Yang
, Nat. Mater.
16
, 101
(2017
).14.
J.
Song
, J.
Woo
, A.
Prakash
, D.
Lee
, and H.
Hwang
, IEEE Electron Device Lett.
36
(7
), 681
(2015
).15.
H.
Kröger
, C.
Ronning
, H.
Hofsäss
, P.
Neumaier
, A.
Bergmaier
, L.
Görgens
, and G.
Dollinger
, Diamond Relat. Mater.
12
(10
), 2042
(2003
).16.
17.
18.
S.
Tappertzhofen
and S.
Hofmann
, Nanoscale
9
(44
), 17494
(2017
).19.
20.
A.
Sebastian
, A.
Pauza
, C.
Rossel
, R. M.
Shelby
, A. F.
Rodríguez
, H.
Pozidis
, and E.
Eleftheriou
, New J. Phys.
13
(1
), 013020
(2011
).21.
Z.
Cheng
, L.
Liu
, S.
Xu
, M.
Lu
, and X.
Wang
, Sci. Rep.
5
, 10718
(2015
).22.
U.
Russo
, D.
Ielmini
, C.
Cagli
, and A. L.
Lacaita
, IEEE Trans. Electron Devices
56
(2
), 186
(2009
).23.
T.
Tsuruoka
, K.
Terabe
, T.
Hasegawa
, and M.
Aono
, Nanotechnology
22
(25
), 254013
(2011
).24.
A. A.
Balandin
, M.
Shamsa
, W. L.
Liu
, C.
Casiraghi
, and A. C.
Ferrari
, Appl. Phys. Lett.
93
(4
), 043115
(2008
).25.
A. J.
Bullen
, K. E.
O'Hara
, D. G.
Cahill
, O.
Monteiro
, and A.
Von Keudell
, J. Appl. Phys.
88
(11
), 6317
(2000
).26.
F.
Tuinstra
and J. L.
Koenig
, J. Chem. Phys.
53
(3
), 1126
(1970
).27.
D.
D'Angelo
, C.
Bongiorno
, M.
Amato
, I.
Deretzis
, A.
La Magna
, E.
Fazio
, and S.
Scalese
, J. Phys. Chem. C
121
(9
), 5408
(2017
).28.
D. G.
McCulloch
and A. R.
Merchant
, Thin Solid Films
290–291
, 99
(1996
).29.
K. M.
Kim
and C. S.
Hwang
, Appl. Phys. Lett.
94
(12
), 122109
(2009
).30.
D.-H.
Kwon
, K. M.
Kim
, J. H.
Jang
, J. M.
Jeon
, M. H.
Lee
, G. H.
Kim
, X.-S.
Li
, G.-S.
Park
, B.
Lee
, S.
Han
, M.
Kim
, and C. S.
Hwang
, Nat. Nanotechnol.
5
, 148
(2010
).31.
C.-P.
Hsiung
, H.-W.
Liao
, J.-Y.
Gan
, T.-B.
Wu
, J.-C.
Hwang
, F.
Chen
, and M.-J.
Tsai
, ACS Nano
4
(9
), 5414
(2010
).32.
W.
Zhongrui
, R.
Mingyi
, M.
Rivu
, J.
Saumil
, J.
Hao
, L.
Peng
, S.
Wenhao
, A.
Shiva
, Z.
Ye
, L.
Can
, W.
Huaqiang
, X.
Qiangfei
, and Y. J.
Joshua
, Adv. Funct. Mater.
28
(6
), 1704862
(2018
).© 2018 Author(s).
2018
Author(s)
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