Single-photon emitting devices have been identified as an important building block for applications in quantum information and quantum communication. They allow us to transduce and collect quantum information over a long distance via photons as so-called flying qubits. In addition, substrates like silicon carbide provide an excellent material platform for electronic devices. In this work, we combine these two features and show that one can drive single photon emitters within a silicon carbide p-i-n-diode. To achieve this, we specifically designed a lateral oriented diode. We find a variety of new color centers emitting non-classical lights in the visible and near-infrared range. One type of emitter can be electrically excited, demonstrating that silicon carbide can act as an ideal platform for electrically controllable single photon sources.
Skip Nav Destination
Bright single photon sources in lateral silicon carbide light emitting diodes
Article navigation
4 June 2018
Research Article|
June 07 2018
Bright single photon sources in lateral silicon carbide light emitting diodes
Matthias Widmann;
Matthias Widmann
a)
1
3. Physikalisches Institute and Research Center SCOPE, University Stuttgart
, Pfaffenwaldring 57, 70569 Stuttgart, Germany
Search for other works by this author on:
Matthias Niethammer;
Matthias Niethammer
1
3. Physikalisches Institute and Research Center SCOPE, University Stuttgart
, Pfaffenwaldring 57, 70569 Stuttgart, Germany
Search for other works by this author on:
Takahiro Makino;
Takahiro Makino
2
National Institutes for Quantum and Radiological Science and Technology
, Takasaki, Gunma 370-1292, Japan
Search for other works by this author on:
Torsten Rendler;
Torsten Rendler
1
3. Physikalisches Institute and Research Center SCOPE, University Stuttgart
, Pfaffenwaldring 57, 70569 Stuttgart, Germany
Search for other works by this author on:
Stefan Lasse;
Stefan Lasse
1
3. Physikalisches Institute and Research Center SCOPE, University Stuttgart
, Pfaffenwaldring 57, 70569 Stuttgart, Germany
Search for other works by this author on:
Takeshi Ohshima
;
Takeshi Ohshima
2
National Institutes for Quantum and Radiological Science and Technology
, Takasaki, Gunma 370-1292, Japan
Search for other works by this author on:
Jawad Ul Hassan
;
Jawad Ul Hassan
3
Department of Physics, Chemistry and Biology, Linköping University
, SE-58183 Linköping, Sweden
Search for other works by this author on:
Nguyen Tien Son;
Nguyen Tien Son
3
Department of Physics, Chemistry and Biology, Linköping University
, SE-58183 Linköping, Sweden
Search for other works by this author on:
Sang-Yun Lee
;
Sang-Yun Lee
b)
4
Center for Quantum Information, Korea Institute of Science and Technology
, Seoul 02792, South Korea
Search for other works by this author on:
Jörg Wrachtrup
Jörg Wrachtrup
1
3. Physikalisches Institute and Research Center SCOPE, University Stuttgart
, Pfaffenwaldring 57, 70569 Stuttgart, Germany
Search for other works by this author on:
Appl. Phys. Lett. 112, 231103 (2018)
Article history
Received:
April 04 2018
Accepted:
May 18 2018
Citation
Matthias Widmann, Matthias Niethammer, Takahiro Makino, Torsten Rendler, Stefan Lasse, Takeshi Ohshima, Jawad Ul Hassan, Nguyen Tien Son, Sang-Yun Lee, Jörg Wrachtrup; Bright single photon sources in lateral silicon carbide light emitting diodes. Appl. Phys. Lett. 4 June 2018; 112 (23): 231103. https://doi.org/10.1063/1.5032291
Download citation file:
Sign in
Don't already have an account? Register
Sign In
You could not be signed in. Please check your credentials and make sure you have an active account and try again.
Sign in via your Institution
Sign in via your InstitutionPay-Per-View Access
$40.00
Citing articles via
Related Content
Bright-line defect formation in silicon carbide injection diodes
Appl. Phys. Lett. (December 1997)
Direct writing of divacancy centers in silicon carbide by femtosecond laser irradiation and subsequent thermal annealing
Appl. Phys. Lett. (January 2022)
Promising cathode materials for high brightness electron beams
J. Vac. Sci. Technol. B (January 1984)
Evaluation of Microstructure and Toughness of AISI D2 Steel by Bright Hardening in Comparison with Oil Quenching
AIP Conference Proceedings (December 2011)
High gradient silicon carbide immersion lens ultrafast electron sources
J. Appl. Phys. (April 2022)