We report the effects of lanthanum doping/alloying on antiferroelectric (AFE) properties of ZrO2. Starting with pure ZrO2, an increase in La doping leads to the narrowing of the AFE double hysteresis loops and an increase in the critical voltage/electric field for AFE → ferroelectric transition. At higher La contents, the polarization-voltage characteristics of doped/alloyed ZrO2 resemble that of a non-linear dielectric without any discernible AFE-type hysteresis. X-ray diffraction based analysis indicates that the increased La content while preserving the non-polar, parent AFE, tetragonal P42/nmc phase leads to a decrease in tetragonality and the (nano-)crystallite size and an increase in the unit cell volume. Furthermore, antiferroelectric behavior is obtained in the as-deposited thin films without requiring any capping metallic layers and post-deposition/-metallization anneals due to which our specific atomic layer deposition system configuration crystallizes and stabilizes the AFE tetragonal phase during growth.
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Antiferroelectricity in lanthanum doped zirconia without metallic capping layers and post-deposition/-metallization anneals
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28 May 2018
Research Article|
May 31 2018
Antiferroelectricity in lanthanum doped zirconia without metallic capping layers and post-deposition/-metallization anneals
Zheng Wang;
Zheng Wang
a)
1
School of Electrical and Computer Engineering, Georgia Institute of Technology
, Atlanta, Georgia 30332, USA
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Anthony Arthur Gaskell;
Anthony Arthur Gaskell
a)
1
School of Electrical and Computer Engineering, Georgia Institute of Technology
, Atlanta, Georgia 30332, USA
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Milan Dopita;
Milan Dopita
2
Department of Condensed Matter Physics, Faculty of Mathematics and Physics, Charles University
, Ke Karlovu 5, CZ-121 16 Prague, Czech Republic
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Dominik Kriegner
;
Dominik Kriegner
2
Department of Condensed Matter Physics, Faculty of Mathematics and Physics, Charles University
, Ke Karlovu 5, CZ-121 16 Prague, Czech Republic
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Nujhat Tasneem;
Nujhat Tasneem
1
School of Electrical and Computer Engineering, Georgia Institute of Technology
, Atlanta, Georgia 30332, USA
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Jerry Mack;
Jerry Mack
3
Eugenus, Inc.
, 677 River Oaks Parkway, San Jose, California 95134, USA
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Niloy Mukherjee;
Niloy Mukherjee
3
Eugenus, Inc.
, 677 River Oaks Parkway, San Jose, California 95134, USA
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Zia Karim;
Zia Karim
3
Eugenus, Inc.
, 677 River Oaks Parkway, San Jose, California 95134, USA
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Asif Islam Khan
Asif Islam Khan
b)
1
School of Electrical and Computer Engineering, Georgia Institute of Technology
, Atlanta, Georgia 30332, USA
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Zheng Wang
1,a)
Anthony Arthur Gaskell
1,a)
Milan Dopita
2
Dominik Kriegner
2
Nujhat Tasneem
1
Jerry Mack
3
Niloy Mukherjee
3
Zia Karim
3
Asif Islam Khan
1,b)
1
School of Electrical and Computer Engineering, Georgia Institute of Technology
, Atlanta, Georgia 30332, USA
2
Department of Condensed Matter Physics, Faculty of Mathematics and Physics, Charles University
, Ke Karlovu 5, CZ-121 16 Prague, Czech Republic
3
Eugenus, Inc.
, 677 River Oaks Parkway, San Jose, California 95134, USA
a)
Z. Wang and A. Gaskell contributed equally to this work.
Appl. Phys. Lett. 112, 222902 (2018)
Article history
Received:
April 22 2018
Accepted:
May 15 2018
Citation
Zheng Wang, Anthony Arthur Gaskell, Milan Dopita, Dominik Kriegner, Nujhat Tasneem, Jerry Mack, Niloy Mukherjee, Zia Karim, Asif Islam Khan; Antiferroelectricity in lanthanum doped zirconia without metallic capping layers and post-deposition/-metallization anneals. Appl. Phys. Lett. 28 May 2018; 112 (22): 222902. https://doi.org/10.1063/1.5037185
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