We present electrical and structural characterization of epitaxial LaTiO3/SrTiO3 heterostructures integrated directly on Si(100). By reducing the thicknesses of the heterostructures, an enhancement in carrier-carrier scattering is observed in the Fermi liquid behavior, followed by a metal to insulator transition in the electrical transport. The insulating behavior is described by activated transport, and its onset occurs near an occupation of 1 electron per Ti site within the SrTiO3, providing evidence for a Mott driven transition. We also discuss the role that structure and gradients in strain could play in enhancing the carrier density. The manipulation of Mott metal-insulator behavior in oxides grown directly on Si opens the pathway to harnessing strongly correlated phenomena in device technologies.
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7 May 2018
Research Article|
May 11 2018
Tuning metal-insulator behavior in LaTiO3/SrTiO3 heterostructures integrated directly on Si(100) through control of atomic layer thickness
Kamyar Ahmadi-Majlan;
Kamyar Ahmadi-Majlan
1
Department of Physics, University of Texas-Arlington
, Arlington, Texas 76019, USA
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Tongjie Chen;
Tongjie Chen
2
Department of Physics, North Carolina State University
, Raleigh, North Carolina 27695, USA
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Zheng Hui Lim;
Zheng Hui Lim
1
Department of Physics, University of Texas-Arlington
, Arlington, Texas 76019, USA
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Patrick Conlin
;
Patrick Conlin
1
Department of Physics, University of Texas-Arlington
, Arlington, Texas 76019, USA
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Ricky Hensley;
Ricky Hensley
1
Department of Physics, University of Texas-Arlington
, Arlington, Texas 76019, USA
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Matthew Chrysler;
Matthew Chrysler
1
Department of Physics, University of Texas-Arlington
, Arlington, Texas 76019, USA
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Dong Su
;
Dong Su
3
Center for Functional Nanomaterials, Brookhaven National Laboratory,
, Upton, New York 11973, USA
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Hanghui Chen;
Hanghui Chen
4
Institute of Physics, New York University Shanghai
, Pudong, Shanghai 200122, China
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Divine P. Kumah
;
Divine P. Kumah
a)
2
Department of Physics, North Carolina State University
, Raleigh, North Carolina 27695, USA
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Joseph H. Ngai
Joseph H. Ngai
b)
1
Department of Physics, University of Texas-Arlington
, Arlington, Texas 76019, USA
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Appl. Phys. Lett. 112, 193104 (2018)
Article history
Received:
December 03 2017
Accepted:
April 17 2018
Citation
Kamyar Ahmadi-Majlan, Tongjie Chen, Zheng Hui Lim, Patrick Conlin, Ricky Hensley, Matthew Chrysler, Dong Su, Hanghui Chen, Divine P. Kumah, Joseph H. Ngai; Tuning metal-insulator behavior in LaTiO3/SrTiO3 heterostructures integrated directly on Si(100) through control of atomic layer thickness. Appl. Phys. Lett. 7 May 2018; 112 (19): 193104. https://doi.org/10.1063/1.5018069
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