Polycrystalline diamond stripes, with a nominal thickness of ∼1.5 μm and various widths, were selectively grown on silicon substrates using chemical vapor deposition. Stress measurements using ultraviolet micro-Raman mapping reveal high compressive stress, up to ∼0.85 GPa, at the center of the diamond stripe, and moderate tensile stress, up to ∼0.14 GPa, in the substrate close to the interface with the diamond. Compressive stresses on diamond decrease with diminishing stripe widths. The stress map is well-described using finite element simulation incorporating solely thermal expansion effects.
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