We report on molecular beam epitaxy growth of symmetric InAs/InP quantum dots (QDs) emitting at a telecom C-band (1.55 μm) with an ultra-small excitonic fine-structure splitting of ∼2 μeV. The QDs are grown on a distributed Bragg reflector (DBR) and systematically characterized by micro-photoluminescence (μ-PL) measurements. One order of magnitude of QD PL intensity enhancement is observed in comparison to the samples without DBR. A combination of power-dependent and polarization-resolved measurements reveals background-free exciton, biexciton, and dark exciton emission with a resolution-limited linewidth below 35 μeV and a biexciton binding energy of ∼1 meV. The results are confirmed by statistical measurements of about 20 QDs.
Telecom wavelength single quantum dots with very small excitonic fine-structure splitting
Andrei Kors, Johann Peter Reithmaier, Mohamed Benyoucef; Telecom wavelength single quantum dots with very small excitonic fine-structure splitting. Appl. Phys. Lett. 23 April 2018; 112 (17): 172102. https://doi.org/10.1063/1.5023184
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