Here, hydrogenated diamond (H-diamond) NOR logic circuits composed of two p-type enhancement-mode (E-mode) metal-oxide-semiconductor field-effect-transistors (MOSFETs) and a load resistor are fabricated and characterized. The fabrication process and the annealing effect on the electrical properties of the NOR logic circuit are demonstrated. There are distinct logical characteristics for the as-received and 300 °C annealed NOR logic circuits. When one or both input voltages for the E-mode MOSFETs are −10.0 V and “high” signals, output voltages respond 0 V and “low” signals. Instead, when both input voltages are 0 V and “low” signals, output voltage responds −10.0 V and a “high” signal. After annealing at 400 °C, the NOR logical characteristics are damaged, which is possibly attributed to the degradation of the H-diamond MOSFETs.
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9 April 2018
Research Article|
April 10 2018
Annealing effects on hydrogenated diamond NOR logic circuits
J. W. Liu;
J. W. Liu
a)
1
Research Center for Functional Materials, National Institute for Materials Science (NIMS)
, 1-1 Namiki, Tsukuba, Ibaraki 305-0044, Japan
a)Author to whom correspondence should be addressed: [email protected]
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H. Oosato;
H. Oosato
2
Nanofabrication Platform, NIMS
, 1-2-1 Sengen, Tsukuba, Ibaraki 305-0047, Japan
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M. Y. Liao;
M. Y. Liao
1
Research Center for Functional Materials, National Institute for Materials Science (NIMS)
, 1-1 Namiki, Tsukuba, Ibaraki 305-0044, Japan
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M. Imura
;
M. Imura
1
Research Center for Functional Materials, National Institute for Materials Science (NIMS)
, 1-1 Namiki, Tsukuba, Ibaraki 305-0044, Japan
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E. Watanabe;
E. Watanabe
2
Nanofabrication Platform, NIMS
, 1-2-1 Sengen, Tsukuba, Ibaraki 305-0047, Japan
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Y. Koide
Y. Koide
3
Research Network and Facility Services Division, NIMS
, 1-2-1 Sengen, Tsukuba, Ibaraki 305-0047, Japan
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J. W. Liu
1,a)
H. Oosato
2
M. Y. Liao
1
M. Imura
1
E. Watanabe
2
Y. Koide
3
1
Research Center for Functional Materials, National Institute for Materials Science (NIMS)
, 1-1 Namiki, Tsukuba, Ibaraki 305-0044, Japan
2
Nanofabrication Platform, NIMS
, 1-2-1 Sengen, Tsukuba, Ibaraki 305-0047, Japan
3
Research Network and Facility Services Division, NIMS
, 1-2-1 Sengen, Tsukuba, Ibaraki 305-0047, Japan
a)Author to whom correspondence should be addressed: [email protected]
Appl. Phys. Lett. 112, 153501 (2018)
Article history
Received:
January 16 2018
Accepted:
March 19 2018
Citation
J. W. Liu, H. Oosato, M. Y. Liao, M. Imura, E. Watanabe, Y. Koide; Annealing effects on hydrogenated diamond NOR logic circuits. Appl. Phys. Lett. 9 April 2018; 112 (15): 153501. https://doi.org/10.1063/1.5022590
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