We studied the tunnel magnetoresistance (TMR) of L10-FePd perpendicular magnetic tunnel junctions (p-MTJs) with an FePd free layer and an inserted diffusion barrier. The diffusion barriers studied here (Ta and W) were shown to enhance the TMR ratio of the p-MTJs formed using high-temperature annealing, which are necessary for the formation of high quality L10-FePd films and MgO barriers. The L10-FePd p-MTJ stack was developed with an FePd free layer with a stack of FePd/X/Co20Fe60B20, where X is the diffusion barrier, and patterned into micron-sized MTJ pillars. The addition of the diffusion barrier was found to greatly enhance the magneto-transport behavior of the L10-FePd p-MTJ pillars such that those without a diffusion barrier exhibited negligible TMR ratios (<1.0%), whereas those with a Ta (W) diffusion barrier exhibited TMR ratios of 8.0% (7.0%) at room temperature and 35.0% (46.0%) at 10 K after post-annealing at 350 °C. These results indicate that diffusion barriers could play a crucial role in realizing high TMR ratios in bulk p-MTJs such as those based on FePd and Mn-based perpendicular magnetic anisotropy materials for spintronic applications.
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Enhancement of tunneling magnetoresistance by inserting a diffusion barrier in L1-FePd perpendicular magnetic tunnel junctions
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9 April 2018
Research Article|
April 09 2018
Enhancement of tunneling magnetoresistance by inserting a diffusion barrier in L1-FePd perpendicular magnetic tunnel junctions
De-Lin Zhang;
De-Lin Zhang
1
Department of Electrical and Computer Engineering, University of Minnesota
, Minneapolis, Minnesota 55455, USA
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Karl B. Schliep;
Karl B. Schliep
2
Department of Chemical Engineering and Materials Science, University of Minnesota
, Minneapolis, Minnesota 55455, USA
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Ryan J. Wu;
Ryan J. Wu
2
Department of Chemical Engineering and Materials Science, University of Minnesota
, Minneapolis, Minnesota 55455, USA
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P. Quarterman;
P. Quarterman
1
Department of Electrical and Computer Engineering, University of Minnesota
, Minneapolis, Minnesota 55455, USA
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Danielle Reifsnyder Hickey;
Danielle Reifsnyder Hickey
2
Department of Chemical Engineering and Materials Science, University of Minnesota
, Minneapolis, Minnesota 55455, USA
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Yang Lv
;
Yang Lv
1
Department of Electrical and Computer Engineering, University of Minnesota
, Minneapolis, Minnesota 55455, USA
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Xiaohui Chao;
Xiaohui Chao
1
Department of Electrical and Computer Engineering, University of Minnesota
, Minneapolis, Minnesota 55455, USA
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Hongshi Li;
Hongshi Li
2
Department of Chemical Engineering and Materials Science, University of Minnesota
, Minneapolis, Minnesota 55455, USA
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Jun-Yang Chen
;
Jun-Yang Chen
1
Department of Electrical and Computer Engineering, University of Minnesota
, Minneapolis, Minnesota 55455, USA
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Zhengyang Zhao
;
Zhengyang Zhao
1
Department of Electrical and Computer Engineering, University of Minnesota
, Minneapolis, Minnesota 55455, USA
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Mahdi Jamali;
Mahdi Jamali
1
Department of Electrical and Computer Engineering, University of Minnesota
, Minneapolis, Minnesota 55455, USA
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K. Andre Mkhoyan;
K. Andre Mkhoyan
2
Department of Chemical Engineering and Materials Science, University of Minnesota
, Minneapolis, Minnesota 55455, USA
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Jian-Ping Wang
Jian-Ping Wang
a)
1
Department of Electrical and Computer Engineering, University of Minnesota
, Minneapolis, Minnesota 55455, USA
a)Author to whom correspondence should be addressed: [email protected]
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De-Lin Zhang
1
Karl B. Schliep
2
Ryan J. Wu
2
P. Quarterman
1
Danielle Reifsnyder Hickey
2
Yang Lv
1
Xiaohui Chao
1
Hongshi Li
2
Jun-Yang Chen
1
Zhengyang Zhao
1
Mahdi Jamali
1
K. Andre Mkhoyan
2
Jian-Ping Wang
1,a)
1
Department of Electrical and Computer Engineering, University of Minnesota
, Minneapolis, Minnesota 55455, USA
2
Department of Chemical Engineering and Materials Science, University of Minnesota
, Minneapolis, Minnesota 55455, USA
a)Author to whom correspondence should be addressed: [email protected]
Appl. Phys. Lett. 112, 152401 (2018)
Article history
Received:
December 12 2017
Accepted:
February 13 2018
Citation
De-Lin Zhang, Karl B. Schliep, Ryan J. Wu, P. Quarterman, Danielle Reifsnyder Hickey, Yang Lv, Xiaohui Chao, Hongshi Li, Jun-Yang Chen, Zhengyang Zhao, Mahdi Jamali, K. Andre Mkhoyan, Jian-Ping Wang; Enhancement of tunneling magnetoresistance by inserting a diffusion barrier in L1-FePd perpendicular magnetic tunnel junctions. Appl. Phys. Lett. 9 April 2018; 112 (15): 152401. https://doi.org/10.1063/1.5019193
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