The charge-state control of nitrogen-vacancy (NV) centers in diamond is very important toward its applications because the NV centers undergo stochastic charge-state transitions between the negative charge state (NV−) and the neutral charge state (NV0) of the NV center upon illumination. In this letter, engineering of the Fermi level by a nin diamond junction was demonstrated for the control of the charge state of the NV centers in the intrinsic (i) layer region. By changing the size (d) of the i-layer region between the phosphorus-doped n-type layer regions (nin) from 2 μm to 10 μm, we realized the gradual change in the NV− charge-state population in the i-layer region from 60% to 80% under 532 nm excitation, which can be attributed to the band bending in the i-layer region. Also, we quantitatively simulated the changes in the Fermi level in the i-layer region depending on d with various concentrations of impurities in the i-layer region.
Engineering of Fermi level by nin diamond junction for control of charge states of NV centers
T. Murai, T. Makino, H. Kato, M. Shimizu, T. Murooka, E. D. Herbschleb, Y. Doi, H. Morishita, M. Fujiwara, M. Hatano, S. Yamasaki, N. Mizuochi; Engineering of Fermi level by nin diamond junction for control of charge states of NV centers. Appl. Phys. Lett. 12 March 2018; 112 (11): 111903. https://doi.org/10.1063/1.5010956
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