Epitaxial films of bismuth telluride topological insulators have received increasing attention due to their potential applications in spintronic and quantum computation. One of the most important properties of epitaxial films is the presence of interface defects due to the lateral lattice mismatch since electrically active defects can drastically compromise device performance. By describing hybrid reflections in hexagonal bismuth telluride films on cubic substrates, in-plane lattice mismatches were characterized with accuracy at least 20 times better than using other X-ray diffraction methods, providing clear evidence of 0.007% lateral lattice mismatch, consistent with stress relaxation associated with van der Waals gaps in the film structure.
Hybrid reflections from multiple x-ray scattering in epitaxial bismuth telluride topological insulator films
Sérgio L. Morelhão, Stefan Kycia, Samuel Netzke, Celso I. Fornari, Paulo H. O. Rappl, Eduardo Abramof; Hybrid reflections from multiple x-ray scattering in epitaxial bismuth telluride topological insulator films. Appl. Phys. Lett. 5 March 2018; 112 (10): 101903. https://doi.org/10.1063/1.5020375
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