Epitaxial films of bismuth telluride topological insulators have received increasing attention due to their potential applications in spintronic and quantum computation. One of the most important properties of epitaxial films is the presence of interface defects due to the lateral lattice mismatch since electrically active defects can drastically compromise device performance. By describing hybrid reflections in hexagonal bismuth telluride films on cubic substrates, in-plane lattice mismatches were characterized with accuracy at least 20 times better than using other X-ray diffraction methods, providing clear evidence of 0.007% lateral lattice mismatch, consistent with stress relaxation associated with van der Waals gaps in the film structure.
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5 March 2018
Research Article|
March 06 2018
Hybrid reflections from multiple x-ray scattering in epitaxial bismuth telluride topological insulator films
Sérgio L. Morelhão
;
Sérgio L. Morelhão
1
Department of Physics, University of Guelph
, Guelph, Ontario N1G 1W2, Canada
2
Institute of Physics, University of São Paulo
, São Paulo 05508-090, Brazil
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Stefan Kycia;
Stefan Kycia
1
Department of Physics, University of Guelph
, Guelph, Ontario N1G 1W2, Canada
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Samuel Netzke
;
Samuel Netzke
1
Department of Physics, University of Guelph
, Guelph, Ontario N1G 1W2, Canada
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Celso I. Fornari
;
Celso I. Fornari
3
National Institute for Space Research
, São José dos Campos, São Paulo 12227-010, Brazil
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Paulo H. O. Rappl
;
Paulo H. O. Rappl
3
National Institute for Space Research
, São José dos Campos, São Paulo 12227-010, Brazil
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Eduardo Abramof
Eduardo Abramof
3
National Institute for Space Research
, São José dos Campos, São Paulo 12227-010, Brazil
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Appl. Phys. Lett. 112, 101903 (2018)
Article history
Received:
December 22 2017
Accepted:
February 21 2018
Citation
Sérgio L. Morelhão, Stefan Kycia, Samuel Netzke, Celso I. Fornari, Paulo H. O. Rappl, Eduardo Abramof; Hybrid reflections from multiple x-ray scattering in epitaxial bismuth telluride topological insulator films. Appl. Phys. Lett. 5 March 2018; 112 (10): 101903. https://doi.org/10.1063/1.5020375
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