We have demonstrated that depletion/enhancement-mode β-Ga2O3 on insulator field-effect transistors can achieve a record high drain current density of 1.5/1.0 A/mm by utilizing a highly doped β-Ga2O3 nano-membrane as the channel. β-Ga2O3 on insulator field-effect transistor (GOOI FET) shows a high on/off ratio of 1010 and low subthreshold slope of 150 mV/dec even with 300 nm thick SiO2. The enhancement-mode GOOI FET is achieved through surface depletion. An ultra-fast, high resolution thermo-reflectance imaging technique is applied to study the self-heating effect by directly measuring the local surface temperature. High drain current, low Rc, and wide bandgap make the β-Ga2O3 on insulator field-effect transistor a promising candidate for future power electronics applications.
β-Ga2O3 on insulator field-effect transistors with drain currents exceeding 1.5 A/mm and their self-heating effect
Hong Zhou, Kerry Maize, Gang Qiu, Ali Shakouri, Peide D. Ye; β-Ga2O3 on insulator field-effect transistors with drain currents exceeding 1.5 A/mm and their self-heating effect. Appl. Phys. Lett. 28 August 2017; 111 (9): 092102. https://doi.org/10.1063/1.5000735
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