Measuring atomic positions in-situ under an external electric field can provide important insights into the structure-property relationship of electronic materials. In this paper, we demonstrate picometer level accuracy and precision of atomic positions in single-crystalline SrTiO3 under an electric field through annular dark-field scanning transmission electron microscopy. By carrying out electrical biasing in-situ electron microscopy at the atomic scale, the lattice constant was measured with a precision of 9.0 pm under an electric field of ±0.57 kV/cm. In addition, the Ti position in the SrTiO3 unit cell was measured with an accuracy of 20.0 pm at a confidence level of greater than 93%. This opens up a possibility of characterizing functional electronic devices at atomic resolution under operative conditions.
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7 August 2017
Research Article|
August 11 2017
Electron microscopy with high accuracy and precision at atomic resolution: In-situ observation of a dielectric crystal under electric field
Yukio Sato;
Yukio Sato
1
Department of Materials Science, Kyushu University
, 744 Motooka, Nishi-ku, Fukuoka 819-0395, Japan
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Takashi Gondo;
Takashi Gondo
2
Mel-Build Corporation
, 3-1-15, Shimoyamato, Nishi-ku, Fukuoka 819-0052, Japan
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Hiroya Miyazaki;
Hiroya Miyazaki
2
Mel-Build Corporation
, 3-1-15, Shimoyamato, Nishi-ku, Fukuoka 819-0052, Japan
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Ryo Teranishi;
Ryo Teranishi
1
Department of Materials Science, Kyushu University
, 744 Motooka, Nishi-ku, Fukuoka 819-0395, Japan
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Kenji Kaneko
Kenji Kaneko
1
Department of Materials Science, Kyushu University
, 744 Motooka, Nishi-ku, Fukuoka 819-0395, Japan
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Appl. Phys. Lett. 111, 062904 (2017)
Article history
Received:
June 04 2017
Accepted:
July 28 2017
Citation
Yukio Sato, Takashi Gondo, Hiroya Miyazaki, Ryo Teranishi, Kenji Kaneko; Electron microscopy with high accuracy and precision at atomic resolution: In-situ observation of a dielectric crystal under electric field. Appl. Phys. Lett. 7 August 2017; 111 (6): 062904. https://doi.org/10.1063/1.4986361
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