We have used hard X-ray photoelectron spectroscopy to probe the Pt/Ru/PbZr0.52Ti0.48O3 (PZT) interface in a Pt/Ru/PZT(220 nm)/Pt/TiO2/SiO2/Si stack. A customized sample-holder allows in-situ photoemission analysis while applying bias to the capacitor. Hard X-rays probe the buried interface between the top electrode and the ferroelectric PZT. The use of operando conditions reveals a polarization-dependent electronic response, most probably due to imperfect screening of the depolarizing field. There is evidence for an additional core level component related to the electrode-PZT interface. Zr oxide nanostructures at the surface of the sol-gel layer may form a ferroelectric dead layer at the interface, affecting device performance.

Topics
Electrical properties and parameters, Hard X-rays, Dielectric properties, Ferroelectric materials, PZT films, Core level shifts, Solgels, X-ray photoelectron spectroscopy, Surface optics, Transition metal oxides
© 2017 Author(s).
2017
Author(s)
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