Stacking two-dimensional materials into van der Waals heterostructures with distinct interlayer twisting angles opens up new strategies for electronic structure and physical property engineering. Here, we investigate how the interlayer twisting angles affect the photoluminescence (PL) and Raman spectra of the MoS2/graphene heterostructures. Based on a series of heterostructure samples with different interlayer twisting angles, we found that the PL and Raman spectra of the monolayer MoS2 in these heterostructures are strongly twisting angle dependent. When the interlayer twisting angle evolves from 0° to 30°, both the PL intensity and emission energy increase, while the splitting of the E2g Raman mode decreases gradually. The observed phenomena are attributed to the twisting angle dependent interlayer interaction and misorientation-induced lattice strain between MoS2 and graphene.
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Modulating PL and electronic structures of MoS2/graphene heterostructures via interlayer twisting angle
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25 December 2017
Research Article|
December 28 2017
Modulating PL and electronic structures of MoS2/graphene heterostructures via interlayer twisting angle
Luojun Du;
Luojun Du
1
Department of Physics, Beijing Key Laboratory of Opto-Electronic Functional Materials and Micro-nano Devices, Renmin University of China
, Beijing 100872, China
2
Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences
, Beijing 100190, China
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Hua Yu;
Hua Yu
2
Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences
, Beijing 100190, China
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Mengzhou Liao;
Mengzhou Liao
2
Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences
, Beijing 100190, China
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Shuopei Wang;
Shuopei Wang
2
Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences
, Beijing 100190, China
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Li Xie;
Li Xie
2
Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences
, Beijing 100190, China
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Xiaobo Lu;
Xiaobo Lu
2
Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences
, Beijing 100190, China
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Jianqi Zhu;
Jianqi Zhu
2
Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences
, Beijing 100190, China
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Na Li;
Na Li
2
Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences
, Beijing 100190, China
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Cheng Shen;
Cheng Shen
2
Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences
, Beijing 100190, China
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Peng Chen;
Peng Chen
2
Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences
, Beijing 100190, China
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Rong Yang;
Rong Yang
2
Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences
, Beijing 100190, China
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Dongxia Shi;
Dongxia Shi
a)
2
Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences
, Beijing 100190, China
3
School of Physical Sciences, University of Chinese Academy of Science
, Beijing 100190, China
4
Beijing Key Laboratory for Nanomaterials and Nanodevices
, Beijing 100190, China
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Guangyu Zhang
Guangyu Zhang
a)
2
Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences
, Beijing 100190, China
3
School of Physical Sciences, University of Chinese Academy of Science
, Beijing 100190, China
4
Beijing Key Laboratory for Nanomaterials and Nanodevices
, Beijing 100190, China
5
Collaborative Innovation Center of Quantum Matter
, Beijing 100190, China
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a)
Authors to whom correspondence should be addressed: dxshi@iphy.ac.cn and gyzhang@iphy.ac.cn
Appl. Phys. Lett. 111, 263106 (2017)
Article history
Received:
October 30 2017
Accepted:
December 18 2017
Citation
Luojun Du, Hua Yu, Mengzhou Liao, Shuopei Wang, Li Xie, Xiaobo Lu, Jianqi Zhu, Na Li, Cheng Shen, Peng Chen, Rong Yang, Dongxia Shi, Guangyu Zhang; Modulating PL and electronic structures of MoS2/graphene heterostructures via interlayer twisting angle. Appl. Phys. Lett. 25 December 2017; 111 (26): 263106. https://doi.org/10.1063/1.5011120
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