Surface acoustic wave (SAW) devices using embedded interdigital transducers (IDTs) on an AlN/diamond/Si layered substrate are fabricated, and their performances are investigated. The Sezawa mode is the dominant resonance with the highest resonant frequency up to 17.7 GHz, a signal amplitude of 20 dB, and an electromechanical coupling coefficient of 0.92%. Comparing these SAW devices with those having the conventional IDTs on the same layered structure, the output SAW power and resonant frequency of devices are improved by 10.7% and 1.1%, respectively, for the embedded IDT devices. This is because the different field distribution leads to the different Bragg reflection and phase velocity for the two types of IDTs. The radiation frequency characteristics indicate that the advantages of the embedded IDTs would be useful for high frequency, high power applications such as monolithic integrated millimeter-wave integrated circuit and high speed communications.
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Enhanced performance of 17.7 GHz SAW devices based on AlN/diamond/Si layered structure with embedded nanotransducer
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18 December 2017
Research Article|
December 19 2017
Enhanced performance of 17.7 GHz SAW devices based on AlN/diamond/Si layered structure with embedded nanotransducer
Lei Wang;
Lei Wang
1
College of Computer, National University of Defense Technology
, Changsha 410073, People's Republic of China
2
National Laboratory for Parallel and Distributed Processing, National University of Defense Technology
, Changsha 410073, People's Republic of China
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Shuming Chen;
Shuming Chen
a)
1
College of Computer, National University of Defense Technology
, Changsha 410073, People's Republic of China
2
National Laboratory for Parallel and Distributed Processing, National University of Defense Technology
, Changsha 410073, People's Republic of China
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Jinying Zhang
;
Jinying Zhang
b)
3
Institute of Semiconductors, Chinese Academy of Sciences
, Beijing 100083, People's Republic of China
4
School of Electronic, Electrical and Communication Engineering, University of Chinese Academy of Sciences
, Beijing 100049, People's Republic of China
5
State Key Laboratory of Transducer Technology
, Shanghai 200050, People's Republic of China
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Dingbang Xiao;
Dingbang Xiao
6
College of Mechatronic Engineering and Automation, National University of Defense Technology
, Changsha 410073, People's Republic of China
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Kaifeng Han;
Kaifeng Han
7
Institute of Marine Science and Engineering, National University of Defense Technology
, Changsha 410073, People's Republic of China
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Xi Ning;
Xi Ning
1
College of Computer, National University of Defense Technology
, Changsha 410073, People's Republic of China
2
National Laboratory for Parallel and Distributed Processing, National University of Defense Technology
, Changsha 410073, People's Republic of China
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Jingtian Liu;
Jingtian Liu
1
College of Computer, National University of Defense Technology
, Changsha 410073, People's Republic of China
2
National Laboratory for Parallel and Distributed Processing, National University of Defense Technology
, Changsha 410073, People's Republic of China
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Zhe Chen;
Zhe Chen
1
College of Computer, National University of Defense Technology
, Changsha 410073, People's Republic of China
2
National Laboratory for Parallel and Distributed Processing, National University of Defense Technology
, Changsha 410073, People's Republic of China
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a)
Electronic mail: smchen@nudt.edu.cn
b)
Electronic mail: jyzhang@semi.ac.cn
c)
Electronic mail: zhouswod@163.com
Appl. Phys. Lett. 111, 253502 (2017)
Article history
Received:
September 28 2017
Accepted:
December 01 2017
Citation
Lei Wang, Shuming Chen, Jinying Zhang, Dingbang Xiao, Kaifeng Han, Xi Ning, Jingtian Liu, Zhe Chen, Jian Zhou; Enhanced performance of 17.7 GHz SAW devices based on AlN/diamond/Si layered structure with embedded nanotransducer. Appl. Phys. Lett. 18 December 2017; 111 (25): 253502. https://doi.org/10.1063/1.5006884
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