We report fabrication and characterization of InAs nanowire devices with two closely placed parallel nanowires. The fabrication process we develop includes selective deposition of the nanowires with micron scale alignment onto predefined finger bottom gates using a polymer transfer technique. By tuning the double nanowire with the finger bottom gates, we observed the formation of parallel double quantum dots with one quantum dot in each nanowire bound by the normal metal contact edges. We report the gate tunability of the charge states in individual dots as well as the inter-dot electrostatic coupling. In addition, we fabricate a device with separate normal metal contacts and a common superconducting contact to the two parallel wires and confirm the dot formation in each wire from comparison of the transport properties and a superconducting proximity gap feature for the respective wires. With the fabrication techniques established in this study, devices can be realized for more advanced experiments on Cooper-pair splitting, generation of Parafermions, and so on.
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4 December 2017
Research Article|
December 08 2017
Gate tunable parallel double quantum dots in InAs double-nanowire devices
S. Baba;
S. Baba
a)
1
Department of Applied Physics, University of Tokyo
, 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-8656, Japan
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S. Matsuo;
S. Matsuo
1
Department of Applied Physics, University of Tokyo
, 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-8656, Japan
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H. Kamata;
H. Kamata
2
Center for Emergent Matter Science, RIKEN
, 2-1 Hirosawa, Wako-shi, Saitama 351-0198, Japan
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R. S. Deacon;
R. S. Deacon
2
Center for Emergent Matter Science, RIKEN
, 2-1 Hirosawa, Wako-shi, Saitama 351-0198, Japan
3
Advanced Device Laboratory, RIKEN
, 2-1 Hirosawa, Wako-shi, Saitama 351-0198, Japan
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A. Oiwa;
A. Oiwa
4
Institute of Scientific and Industrial Research, Osaka University
, Ibaraki, Osaka 567-0047, Japan
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K. Li
;
K. Li
5
Beijing Key Laboratory of Quantum Devices, Key Laboratory for the Physics and Chemistry of Nanodevices, and Department of Electronics, Peking University
, Beijing 100871, China
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S. Jeppesen;
S. Jeppesen
6
Division of Solid State Physics, Lund University
, Box 118, SE-221 00 Lund, Sweden
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L. Samuelson;
L. Samuelson
6
Division of Solid State Physics, Lund University
, Box 118, SE-221 00 Lund, Sweden
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H. Q. Xu;
H. Q. Xu
5
Beijing Key Laboratory of Quantum Devices, Key Laboratory for the Physics and Chemistry of Nanodevices, and Department of Electronics, Peking University
, Beijing 100871, China
6
Division of Solid State Physics, Lund University
, Box 118, SE-221 00 Lund, Sweden
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S. Tarucha
S. Tarucha
b)
1
Department of Applied Physics, University of Tokyo
, 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-8656, Japan
2
Center for Emergent Matter Science, RIKEN
, 2-1 Hirosawa, Wako-shi, Saitama 351-0198, Japan
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S. Baba
1,a)
S. Matsuo
1
H. Kamata
2
R. S. Deacon
2,3
A. Oiwa
4
S. Jeppesen
6
L. Samuelson
6
H. Q. Xu
5,6
S. Tarucha
1,2,b)
1
Department of Applied Physics, University of Tokyo
, 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-8656, Japan
2
Center for Emergent Matter Science, RIKEN
, 2-1 Hirosawa, Wako-shi, Saitama 351-0198, Japan
3
Advanced Device Laboratory, RIKEN
, 2-1 Hirosawa, Wako-shi, Saitama 351-0198, Japan
4
Institute of Scientific and Industrial Research, Osaka University
, Ibaraki, Osaka 567-0047, Japan
5
Beijing Key Laboratory of Quantum Devices, Key Laboratory for the Physics and Chemistry of Nanodevices, and Department of Electronics, Peking University
, Beijing 100871, China
6
Division of Solid State Physics, Lund University
, Box 118, SE-221 00 Lund, Sweden
a)
Electronic mail: [email protected]
b)
Electronic mail: [email protected]
Appl. Phys. Lett. 111, 233513 (2017)
Article history
Received:
July 25 2017
Accepted:
October 23 2017
Citation
S. Baba, S. Matsuo, H. Kamata, R. S. Deacon, A. Oiwa, K. Li, S. Jeppesen, L. Samuelson, H. Q. Xu, S. Tarucha; Gate tunable parallel double quantum dots in InAs double-nanowire devices. Appl. Phys. Lett. 4 December 2017; 111 (23): 233513. https://doi.org/10.1063/1.4997646
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