Large scale fabrication using Complementary Metal Oxide Semiconductor compatible technology of semiconductor nanostructures that operate on the principles of quantum transport is an exciting possibility now due to the recent development of ultra-high mobility hole gases in epitaxial germanium grown on standard silicon substrates. We present here a ballistic transport study of patterned surface gates on strained Ge quantum wells with SiGe barriers, which confirms the quantum characteristics of the Ge heavy hole valence band structure in 1-dimension. Quantised conductance at multiples of 2e2/h is a universal feature of hole transport in Ge up to 10 × (2e2/h). The behaviour of ballistic plateaus with finite source-drain bias and applied magnetic field is elucidated. In addition, a reordering of the ground state is observed.
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4 December 2017
Research Article|
December 07 2017
Quantum ballistic transport in strained epitaxial germanium Available to Purchase
Y. Gul;
Y. Gul
a)
1
London Centre for Nanotechnology, University College London
, 17-19 Gordon Street, London WC1H 0AH, United Kingdom
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S. N. Holmes;
S. N. Holmes
2
Toshiba Research Europe Limited, Cambridge Research Laboratory
, 208 Cambridge Science Park, Milton Road, Cambridge CB4 0GZ, United Kingdom
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P. J. Newton;
P. J. Newton
3
Department of Physics, Cavendish Laboratory, University of Cambridge
, J. J. Thomson Avenue, Cambridge CB3 0HE, United Kingdom
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D. J. P. Ellis;
D. J. P. Ellis
2
Toshiba Research Europe Limited, Cambridge Research Laboratory
, 208 Cambridge Science Park, Milton Road, Cambridge CB4 0GZ, United Kingdom
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C. Morrison;
C. Morrison
4
Department of Physics, University of Warwick
, Coventry CV4 7AL, United Kingdom
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M. Pepper;
M. Pepper
1
London Centre for Nanotechnology, University College London
, 17-19 Gordon Street, London WC1H 0AH, United Kingdom
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C. H. W. Barnes;
C. H. W. Barnes
3
Department of Physics, Cavendish Laboratory, University of Cambridge
, J. J. Thomson Avenue, Cambridge CB3 0HE, United Kingdom
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M. Myronov
M. Myronov
4
Department of Physics, University of Warwick
, Coventry CV4 7AL, United Kingdom
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Y. Gul
1,a)
S. N. Holmes
2
P. J. Newton
3
D. J. P. Ellis
2
C. Morrison
4
M. Pepper
1
C. H. W. Barnes
3
M. Myronov
4
1
London Centre for Nanotechnology, University College London
, 17-19 Gordon Street, London WC1H 0AH, United Kingdom
2
Toshiba Research Europe Limited, Cambridge Research Laboratory
, 208 Cambridge Science Park, Milton Road, Cambridge CB4 0GZ, United Kingdom
3
Department of Physics, Cavendish Laboratory, University of Cambridge
, J. J. Thomson Avenue, Cambridge CB3 0HE, United Kingdom
4
Department of Physics, University of Warwick
, Coventry CV4 7AL, United Kingdom
a)
Electronic mail: [email protected]
Appl. Phys. Lett. 111, 233512 (2017)
Article history
Received:
October 11 2017
Accepted:
November 26 2017
Citation
Y. Gul, S. N. Holmes, P. J. Newton, D. J. P. Ellis, C. Morrison, M. Pepper, C. H. W. Barnes, M. Myronov; Quantum ballistic transport in strained epitaxial germanium. Appl. Phys. Lett. 4 December 2017; 111 (23): 233512. https://doi.org/10.1063/1.5008969
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