Nanoscale control of the quasi-two-dimensional electron gas at the LaAlO3/SrTiO3 (LAO/STO) interface by a conductive probe tip has triggered the development of a number of electronic devices. While the spatial distribution of the conductance is crucial for such devices, it is challenging to directly visualize the local electrical properties at the buried interface. Here, we demonstrate conductivity imaging of sketched nanostructures at the LAO/STO interface by microwave impedance microscopy (MIM) with a lateral resolution on the order of 100 nm. The sheet conductance extracted from the MIM data agrees with the transport measurement. The tip-induced insulator-to-metal transition is observed above a threshold voltage of +4 V. Our work paves the way for studying emergent phenomena at oxide interfaces by probing nanoscale conductance distribution.

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