This work shows an analytical semiconductor diode model suitable to describe photovoltaic cells for a large variety of physical parameters, such as mobility of charge carriers and illumination intensity. The model is based on a simplified drift-diffusion calculation assuming a constant electric field and a linear increasing current inside the semiconductor layer. The model also accounts for recombination processes in the active and contact layers. Organic and inorganic solar cells can be accurately modeled, which is confirmed by comparison of experimental data and full drift-diffusion calculations with the same physical parameters. In addition, this model shows how physical properties can be directly extracted from the crossing point often found in J-V characteristics.

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