An Al0.6Ga0.4N/Al0.5Ga0.5N metal–semiconductor–metal (MSM) deep-ultraviolet (DUV) photodetector was developed. It possesses both high photosensitivity and high rejection ratios in comparison to photomultiplier tubes (PMTs). The photodetector was designed to have a two-dimensional electron gas layer at the Al0.6Ga0.4N/Al0.5Ga0.5N hetero-interface, which plays an important role in increasing the photosensitivity. Additionally, for reducing the dark current, a V/Al/Mo/Au electrode was employed as a Schottky electrode with an appropriate barrier height. Upon irradiation with 10 μW/cm2, an extremely low dark current (10−11 A) and high photocurrent (5 × 10−5 A) were achieved at a bias voltage of 5 V. The photodetector was true solar-blind with a cut-off wavelength of 280 nm. A high photosensitivity of 106 A/W and a rejection ratio of 106 were realized under the irradiation of 10 nW/cm2 DUV photons. The present results revealed that the AlGaN/AlGaN MSM DUV photodetector is one of the most suitable candidates for an all solid-state photodetector with a performance superior to PMTs.
Skip Nav Destination
Article navigation
6 November 2017
Research Article|
November 07 2017
High-performance solar-blind Al0.6Ga0.4N/Al0.5Ga0.5N MSM type photodetector
Akira Yoshikawa;
Akira Yoshikawa
1
Faculty of Science and Technology, Meijo University
, Nagoya 468-8502, Japan
2
UVC Project, Asahi-Kasei Corporation
, Fuji 416-8501, Japan
Search for other works by this author on:
Saki Ushida;
Saki Ushida
1
Faculty of Science and Technology, Meijo University
, Nagoya 468-8502, Japan
Search for other works by this author on:
Kazuhiro Nagase;
Kazuhiro Nagase
2
UVC Project, Asahi-Kasei Corporation
, Fuji 416-8501, Japan
Search for other works by this author on:
Motoaki Iwaya;
Motoaki Iwaya
1
Faculty of Science and Technology, Meijo University
, Nagoya 468-8502, Japan
Search for other works by this author on:
Tetsuya Takeuchi;
Tetsuya Takeuchi
1
Faculty of Science and Technology, Meijo University
, Nagoya 468-8502, Japan
Search for other works by this author on:
Satoshi Kamiyama;
Satoshi Kamiyama
1
Faculty of Science and Technology, Meijo University
, Nagoya 468-8502, Japan
Search for other works by this author on:
Isamu Akasaki
Isamu Akasaki
1
Faculty of Science and Technology, Meijo University
, Nagoya 468-8502, Japan
3
Akasaki Research Center, Nagoya University
, Nagoya 464-8603, Japan
Search for other works by this author on:
Appl. Phys. Lett. 111, 191103 (2017)
Article history
Received:
August 29 2017
Accepted:
October 26 2017
Citation
Akira Yoshikawa, Saki Ushida, Kazuhiro Nagase, Motoaki Iwaya, Tetsuya Takeuchi, Satoshi Kamiyama, Isamu Akasaki; High-performance solar-blind Al0.6Ga0.4N/Al0.5Ga0.5N MSM type photodetector. Appl. Phys. Lett. 6 November 2017; 111 (19): 191103. https://doi.org/10.1063/1.5001979
Download citation file:
Sign in
Don't already have an account? Register
Sign In
You could not be signed in. Please check your credentials and make sure you have an active account and try again.
Pay-Per-View Access
$40.00
Citing articles via
Topological and chiral matter—Physics and applications
Maia G. Vergniory, Takeshi Kondo, et al.
Roadmap on photonic metasurfaces
Sebastian A. Schulz, Rupert. F. Oulton, et al.
Feedback cooling of an insulating high-Q diamagnetically levitated plate
S. Tian, K. Jadeja, et al.
Related Content
Selective area deposited n-Al0.5Ga0.5N channel field effect transistors with high solar-blind ultraviolet photo-responsivity
Appl. Phys. Lett. (April 2017)
Solar-blind ultraviolet photodetectors with thermally reduced graphene oxide formed on high-Al-content AlGaN layers
AIP Advances (November 2021)
Improved Ohmic contacts to plasma etched n-Al0.5Ga0.5N by annealing under nitrogen ambient before metal deposition
J. Appl. Phys. (March 2013)
Measurement and simulation of top- and bottom-illuminated solar-blind AlGaN metal-semiconductor-metal photodetectors with high external quantum efficiencies
J. Appl. Phys. (December 2015)
Impact of open-core threading dislocations on the performance of AlGaN metal-semiconductor-metal photodetectors
J. Appl. Phys. (December 2017)