We developed a method for fabricating high-crystal-quality AlN films by combining a randomly distributed nanosized concavo–convex sapphire substrate (NCC-SS) and a three-step growth method optimized for NCC-SS, i.e., a 3-nm-thick nucleation layer (870 °C), a 150-nm-thick high-temperature layer (1250 °C), and a 3.2-μm-thick medium-temperature layer (1110 °C). The NCC-SS is easily fabricated using a conventional metalorganic vapor phase epitaxy reactor equipped with a showerhead plate. The resultant AlN film has a crack-free and single-step surface with a root-mean-square roughness of 0.5 nm. The full-widths at half-maxima of the X-ray rocking curve were 50/250 arcsec for the (0002)/(10–12) planes, revealing that the NCC surface is critical for achieving such a high-quality film. Hexagonal-pyramid-shaped voids at the AlN/NCC-SS interface and confinement of dislocations within the 150-nm-thick high-temperature layer were confirmed. The NCC surface feature and resultant faceted voids play an important role in the growth of high-crystal-quality AlN films, likely via localized and/or disordered growth of AlN at the initial stage, contributing to the alignment of high-crystal-quality nuclei and dislocations.
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16 October 2017
Research Article|
October 16 2017
High-quality AlN film grown on a nanosized concave–convex surface sapphire substrate by metalorganic vapor phase epitaxy
Akira Yoshikawa;
Akira Yoshikawa
1
Faculty of Science and Technology, Meijo University
, Nagoya 468-8502, Japan
2
UVC Project, Asahi-Kasei Corporation
, Fuji 416-8501, Japan
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Takaharu Nagatomi;
Takaharu Nagatomi
3
Analysis and Simulation Center, Asahi-Kasei Corporation
, Fuji 416-8501, Japan
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Tomohiro Morishita;
Tomohiro Morishita
4
Asahi-Kasei Microdevices Corporation
, Fuji 416-8501, Japan
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Motoaki Iwaya;
Motoaki Iwaya
1
Faculty of Science and Technology, Meijo University
, Nagoya 468-8502, Japan
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Tetsuya Takeuchi;
Tetsuya Takeuchi
1
Faculty of Science and Technology, Meijo University
, Nagoya 468-8502, Japan
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Satoshi Kamiyama;
Satoshi Kamiyama
1
Faculty of Science and Technology, Meijo University
, Nagoya 468-8502, Japan
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Isamu Akasaki
Isamu Akasaki
1
Faculty of Science and Technology, Meijo University
, Nagoya 468-8502, Japan
5
Akasaki Research Center, Nagoya University
, Nagoya 464-8603, Japan
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Appl. Phys. Lett. 111, 162102 (2017)
Article history
Received:
March 13 2017
Accepted:
September 01 2017
Citation
Akira Yoshikawa, Takaharu Nagatomi, Tomohiro Morishita, Motoaki Iwaya, Tetsuya Takeuchi, Satoshi Kamiyama, Isamu Akasaki; High-quality AlN film grown on a nanosized concave–convex surface sapphire substrate by metalorganic vapor phase epitaxy. Appl. Phys. Lett. 16 October 2017; 111 (16): 162102. https://doi.org/10.1063/1.5008258
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