We report analytic results on quantum capacitance (Cq) measurements and their optical tuning in a dual-gated device with potassium-doped multi-layered black phosphorous (BP) as the channel material. The two-dimensional (2D) layered BP is highly anisotropic with a semi-Dirac dispersion marked by linear and quadratic contributions. The Cq calculations mirror this asymmetric arrangement. A further increase in the asymmetry and consequently Cq is predicted by photon-dressing the BP dispersion. To achieve this and tune Cq in a field-effect transistor (FET), we suggest a configuration wherein a pair of electrostatic (top) and optical (back) gates clamp a BP channel. The back gate shines an optical pulse to rearrange the dispersion of the 2D BP. Analytic calculations are done with Floquet Hamiltonians in the off-resonant regime. The value of such Cq calculations, in addition to its role in adjusting the current drive of an FET, is discussed in the context of metal-insulator and topological phase transitions and enhancements to the thermoelectric figure of merit.
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16 October 2017
Research Article|
October 16 2017
Anisotropy-driven quantum capacitance in multi-layered black phosphorus
Parijat Sengupta
;
Parijat Sengupta
1
Photonics Center, Boston University
, Boston, Massachusetts 02215, USA
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Shaloo Rakheja
Shaloo Rakheja
2
Department of Electrical Engineering, New York University
, Brooklyn, New York 11201, USA
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Appl. Phys. Lett. 111, 161902 (2017)
Article history
Received:
August 08 2017
Accepted:
October 03 2017
Citation
Parijat Sengupta, Shaloo Rakheja; Anisotropy-driven quantum capacitance in multi-layered black phosphorus. Appl. Phys. Lett. 16 October 2017; 111 (16): 161902. https://doi.org/10.1063/1.4999380
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