An electrically pumped wavelength-tunable InGaN quantum dot (QD) based microcavity (MC) lighter emitter with a large tuning range of 129 nm was demonstrated. The multi-mode emission spectrum was tuned by injected current from 564 nm (yellow-green) to 435 nm (violet). The MC light emitter is featured with a double dielectric distributed Bragg reflector structure and a copper substrate fabricated using substrate transfer and laser lift off techniques. By utilizing an InGaN QD active layer with a tunable broad emission spectrum and a Fabry-Pérot cavity which allows multi-longitudinal mode resonating, the emission spectrum could be tuned among several particular cavity modes, which are decided by the gain enhancement factor. In addition, both the enhancement and suppression of MC emission modes caused by the gain enhancement factor were observed in a single MC device. As the first electrically driven III-V nitride semiconductor based tunable MC light emitter with a tuning range of 129 nm, the device is promising for applications such as in wide-gamut compact displays and projectors.
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18 September 2017
Research Article|
September 22 2017
Tunable InGaN quantum dot microcavity light emitters with 129 nm tuning range from yellow-green to violet
Yang Mei;
Yang Mei
1
Department of Electronic Engineering, Optoelectronics Engineering Research Center, Xiamen University
, Xiamen 361005, China
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Rong-Bin Xu;
Rong-Bin Xu
1
Department of Electronic Engineering, Optoelectronics Engineering Research Center, Xiamen University
, Xiamen 361005, China
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Guo-En Weng;
Guo-En Weng
2
Department of Electronic Engineering, East China Normal University
, Shanghai 200241, China
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Huan Xu;
Huan Xu
1
Department of Electronic Engineering, Optoelectronics Engineering Research Center, Xiamen University
, Xiamen 361005, China
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Lei-Ying Ying;
Lei-Ying Ying
1
Department of Electronic Engineering, Optoelectronics Engineering Research Center, Xiamen University
, Xiamen 361005, China
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Zhi-Wei Zheng;
Zhi-Wei Zheng
1
Department of Electronic Engineering, Optoelectronics Engineering Research Center, Xiamen University
, Xiamen 361005, China
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Hao Long;
Hao Long
1
Department of Electronic Engineering, Optoelectronics Engineering Research Center, Xiamen University
, Xiamen 361005, China
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Bao-Ping Zhang;
Bao-Ping Zhang
a)
1
Department of Electronic Engineering, Optoelectronics Engineering Research Center, Xiamen University
, Xiamen 361005, China
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Werner Hofmann;
Werner Hofmann
1
Department of Electronic Engineering, Optoelectronics Engineering Research Center, Xiamen University
, Xiamen 361005, China
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Jian-Ping Liu
;
Jian-Ping Liu
a)
3
Suzhou Institute of Nano-tech and Nano-bionics (SINANO), Chinese Academy of Sciences (CAS)
, Suzhou 215123, China
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Jian Zhang, Jr.;
Jian Zhang, Jr.
4
Microsystem Technology Laboratory, Microsystem and Terahertz Research Center, China Academy of Engineering Physics
, Chengdu 610200, Sichuan Province, China
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Mo Li;
Mo Li
4
Microsystem Technology Laboratory, Microsystem and Terahertz Research Center, China Academy of Engineering Physics
, Chengdu 610200, Sichuan Province, China
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Jian Zhang, Sr.
Jian Zhang, Sr.
4
Microsystem Technology Laboratory, Microsystem and Terahertz Research Center, China Academy of Engineering Physics
, Chengdu 610200, Sichuan Province, China
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a)
Authors to whom correspondence should be addressed: [email protected] and [email protected]
Appl. Phys. Lett. 111, 121107 (2017)
Article history
Received:
July 09 2017
Accepted:
September 11 2017
Citation
Yang Mei, Rong-Bin Xu, Guo-En Weng, Huan Xu, Lei-Ying Ying, Zhi-Wei Zheng, Hao Long, Bao-Ping Zhang, Werner Hofmann, Jian-Ping Liu, Jian Zhang, Mo Li, Jian Zhang; Tunable InGaN quantum dot microcavity light emitters with 129 nm tuning range from yellow-green to violet. Appl. Phys. Lett. 18 September 2017; 111 (12): 121107. https://doi.org/10.1063/1.4994945
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