Two-dimensional (2D) transition metal dichalcogenides (TMDs) receive significant attention due to their intriguing physical properties for both fundamental research and potential applications in electronics, optoelectronics, and catalysis. A high-quality 2D film of NiSe2, a TMD material, is grown epitaxially by a single step direct selenization of a Ni(111) substrate. X-ray photoemission spectroscopy, low-energy electron diffraction, scanning tunneling microscopy, and density functional theory calculations are combined to confirm the formation and structure of the film, revealing a (√3 × √3) superlattice of the NiSe2 film formed on the (√7 × √7) superlattice of the substrate. Fabrication of this 2D NiSe2 film opens opportunities to research its applications, especially for electrocatalysis and energy storage devices.
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11 September 2017
Research Article|
September 15 2017
Epitaxial fabrication of two-dimensional NiSe2 on Ni(111) substrate
Yan Shao;
Yan Shao
a)
1
Institute of Physics and University of Chinese Academy of Sciences, Chinese Academy of Sciences
, Beijing 100190, China
2
Beijing Key Laboratory for Nanomaterials and Nanodevices
, Beijing 100190, China
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Shiru Song;
Shiru Song
a)
1
Institute of Physics and University of Chinese Academy of Sciences, Chinese Academy of Sciences
, Beijing 100190, China
2
Beijing Key Laboratory for Nanomaterials and Nanodevices
, Beijing 100190, China
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Xu Wu;
Xu Wu
1
Institute of Physics and University of Chinese Academy of Sciences, Chinese Academy of Sciences
, Beijing 100190, China
2
Beijing Key Laboratory for Nanomaterials and Nanodevices
, Beijing 100190, China
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Jing Qi;
Jing Qi
1
Institute of Physics and University of Chinese Academy of Sciences, Chinese Academy of Sciences
, Beijing 100190, China
2
Beijing Key Laboratory for Nanomaterials and Nanodevices
, Beijing 100190, China
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Hongliang Lu;
Hongliang Lu
1
Institute of Physics and University of Chinese Academy of Sciences, Chinese Academy of Sciences
, Beijing 100190, China
2
Beijing Key Laboratory for Nanomaterials and Nanodevices
, Beijing 100190, China
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Chen Liu
;
Chen Liu
3
Institute of High Energy Physics, Chinese Academy of Sciences
, Beijing 100049, China
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Shiyu Zhu;
Shiyu Zhu
1
Institute of Physics and University of Chinese Academy of Sciences, Chinese Academy of Sciences
, Beijing 100190, China
2
Beijing Key Laboratory for Nanomaterials and Nanodevices
, Beijing 100190, China
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Zhongliu Liu;
Zhongliu Liu
1
Institute of Physics and University of Chinese Academy of Sciences, Chinese Academy of Sciences
, Beijing 100190, China
2
Beijing Key Laboratory for Nanomaterials and Nanodevices
, Beijing 100190, China
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Jiaou Wang
;
Jiaou Wang
3
Institute of High Energy Physics, Chinese Academy of Sciences
, Beijing 100049, China
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Dongxia Shi;
Dongxia Shi
1
Institute of Physics and University of Chinese Academy of Sciences, Chinese Academy of Sciences
, Beijing 100190, China
2
Beijing Key Laboratory for Nanomaterials and Nanodevices
, Beijing 100190, China
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Shixuan Du;
Shixuan Du
b)
1
Institute of Physics and University of Chinese Academy of Sciences, Chinese Academy of Sciences
, Beijing 100190, China
2
Beijing Key Laboratory for Nanomaterials and Nanodevices
, Beijing 100190, China
4
Collaborative Innovation Center of Quantum Matter
, Beijing 100084, China
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Yeliang Wang
;
Yeliang Wang
b)
1
Institute of Physics and University of Chinese Academy of Sciences, Chinese Academy of Sciences
, Beijing 100190, China
2
Beijing Key Laboratory for Nanomaterials and Nanodevices
, Beijing 100190, China
4
Collaborative Innovation Center of Quantum Matter
, Beijing 100084, China
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H.-J. Gao
H.-J. Gao
1
Institute of Physics and University of Chinese Academy of Sciences, Chinese Academy of Sciences
, Beijing 100190, China
2
Beijing Key Laboratory for Nanomaterials and Nanodevices
, Beijing 100190, China
4
Collaborative Innovation Center of Quantum Matter
, Beijing 100084, China
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a)
Y. Shao and S. Song contributed equally to this work.
b)
Electronic addresses: [email protected] and [email protected]
Appl. Phys. Lett. 111, 113107 (2017)
Article history
Received:
June 20 2017
Accepted:
September 04 2017
Citation
Yan Shao, Shiru Song, Xu Wu, Jing Qi, Hongliang Lu, Chen Liu, Shiyu Zhu, Zhongliu Liu, Jiaou Wang, Dongxia Shi, Shixuan Du, Yeliang Wang, H.-J. Gao; Epitaxial fabrication of two-dimensional NiSe2 on Ni(111) substrate. Appl. Phys. Lett. 11 September 2017; 111 (11): 113107. https://doi.org/10.1063/1.4991065
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