We report gate-tunable memristive switching in patterned LaAlO3/SrTiO3 interfaces at cryogenic temperatures. The application of voltages in the order of a few volts to the back gate of the device allows controlling and switching on and off the inherent memory functionality (memristance). For large and small gate voltages, a simple non-linear resistance characteristic is observed, while a pinched hysteresis loop and memristive switching occur in an intermediate voltage range. The memristance is further controlled by the density of oxygen vacancies, which is tuned by annealing the sample at 300 °C in a nitrogen atmosphere. Depending on the annealing time, the memristance at zero gate voltage can be switched on and off, leading to normally-on and normally-off memristors. The presented device offers reversible and irreversible control of memristive characteristics by gate voltages and annealing, respectively, which may allow compensating fabrication variabilities of memristors that complicate the realization of large memristor-based neural networks.
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27 February 2017
Research Article|
March 03 2017
Gate-tunable, normally-on to normally-off memristance transition in patterned LaAlO3/SrTiO3 interfaces
P. Maier;
P. Maier
1Technische Physik, Physikalisches Institut and Röntgen Center for Complex Material Systems (RCCM),
Universität Würzburg
, Am Hubland, D-97074 Würzburg, Germany
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F. Hartmann;
F. Hartmann
a)
1Technische Physik, Physikalisches Institut and Röntgen Center for Complex Material Systems (RCCM),
Universität Würzburg
, Am Hubland, D-97074 Würzburg, Germany
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J. Gabel;
J. Gabel
2Experimentelle Physik 4, Physikalisches Institut and Röntgen Center for Complex Material Systems (RCCM),
Universität Würzburg
, Am Hubland, D-97074 Würzburg, Germany
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M. Frank;
M. Frank
1Technische Physik, Physikalisches Institut and Röntgen Center for Complex Material Systems (RCCM),
Universität Würzburg
, Am Hubland, D-97074 Würzburg, Germany
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S. Kuhn;
S. Kuhn
1Technische Physik, Physikalisches Institut and Röntgen Center for Complex Material Systems (RCCM),
Universität Würzburg
, Am Hubland, D-97074 Würzburg, Germany
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P. Scheiderer;
P. Scheiderer
2Experimentelle Physik 4, Physikalisches Institut and Röntgen Center for Complex Material Systems (RCCM),
Universität Würzburg
, Am Hubland, D-97074 Würzburg, Germany
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B. Leikert;
B. Leikert
2Experimentelle Physik 4, Physikalisches Institut and Röntgen Center for Complex Material Systems (RCCM),
Universität Würzburg
, Am Hubland, D-97074 Würzburg, Germany
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M. Sing;
M. Sing
2Experimentelle Physik 4, Physikalisches Institut and Röntgen Center for Complex Material Systems (RCCM),
Universität Würzburg
, Am Hubland, D-97074 Würzburg, Germany
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L. Worschech;
L. Worschech
1Technische Physik, Physikalisches Institut and Röntgen Center for Complex Material Systems (RCCM),
Universität Würzburg
, Am Hubland, D-97074 Würzburg, Germany
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R. Claessen;
R. Claessen
2Experimentelle Physik 4, Physikalisches Institut and Röntgen Center for Complex Material Systems (RCCM),
Universität Würzburg
, Am Hubland, D-97074 Würzburg, Germany
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S. Höfling
S. Höfling
1Technische Physik, Physikalisches Institut and Röntgen Center for Complex Material Systems (RCCM),
Universität Würzburg
, Am Hubland, D-97074 Würzburg, Germany
3SUPA, School of Physics and Astronomy,
University of St. Andrews
, St. Andrews KY16 9SS, United Kingdom
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a)
Author to whom correspondence should be addressed. Electronic mail: fabian.hartmann@physik.uni-wuerzburg.de.
Appl. Phys. Lett. 110, 093506 (2017)
Article history
Received:
November 11 2016
Accepted:
February 15 2017
Citation
P. Maier, F. Hartmann, J. Gabel, M. Frank, S. Kuhn, P. Scheiderer, B. Leikert, M. Sing, L. Worschech, R. Claessen, S. Höfling; Gate-tunable, normally-on to normally-off memristance transition in patterned LaAlO3/SrTiO3 interfaces. Appl. Phys. Lett. 27 February 2017; 110 (9): 093506. https://doi.org/10.1063/1.4977834
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