Quantum dots formed by donor-atoms in Si nanodevices can provide a breakthrough for functionality at the atomic level with one-by-one control of electrons. However, single-electron effects in donor-atom devices have only been observed at low temperatures mainly due to the low tunnel barriers. If a few donor-atoms are closely coupled as a molecule to form a quantum dot, the ground-state energy level is significantly deepened, leading to higher tunnel barriers. Here, we demonstrate that such an a-few-donor quantum dot, formed by selective conventional doping of phosphorus (P) donors in a Si nano-channel, sustains Coulomb blockade behavior even at room temperature. In this work, such a quantum dot is formed by 3 P-donors located near the center of the selectively-doped area, which is consistent with a statistical analysis. This finding demonstrates practical conditions for atomic- and molecular-level electronics based on donor-atoms in silicon nanodevices.
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Single-electron quantization at room temperature in a-few-donor quantum dot in silicon nano-transistors
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27 February 2017
Research Article|
March 02 2017
Single-electron quantization at room temperature in a-few-donor quantum dot in silicon nano-transistors
Arup Samanta;
Arup Samanta
1Research Institute of Electronics,
Shizuoka University
, 3-5-1 Johoku, Naka-ku, Hamamatsu 432-8011, Japan
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Manoharan Muruganathan;
Manoharan Muruganathan
2School of Materials Science,
Japan Advanced Institute of Science and Technology
, 1-1 Asahidai, Nomi 923-1292, Japan
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Masahiro Hori;
Masahiro Hori
1Research Institute of Electronics,
Shizuoka University
, 3-5-1 Johoku, Naka-ku, Hamamatsu 432-8011, Japan
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Yukinori Ono;
Yukinori Ono
1Research Institute of Electronics,
Shizuoka University
, 3-5-1 Johoku, Naka-ku, Hamamatsu 432-8011, Japan
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Hiroshi Mizuta;
Hiroshi Mizuta
2School of Materials Science,
Japan Advanced Institute of Science and Technology
, 1-1 Asahidai, Nomi 923-1292, Japan
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Michiharu Tabe;
Michiharu Tabe
1Research Institute of Electronics,
Shizuoka University
, 3-5-1 Johoku, Naka-ku, Hamamatsu 432-8011, Japan
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Daniel Moraru
Daniel Moraru
a)
1Research Institute of Electronics,
Shizuoka University
, 3-5-1 Johoku, Naka-ku, Hamamatsu 432-8011, Japan
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a)
Author to whom correspondence should be addressed. Electronic mail: [email protected]
Appl. Phys. Lett. 110, 093107 (2017)
Article history
Received:
December 27 2016
Accepted:
February 17 2017
Citation
Arup Samanta, Manoharan Muruganathan, Masahiro Hori, Yukinori Ono, Hiroshi Mizuta, Michiharu Tabe, Daniel Moraru; Single-electron quantization at room temperature in a-few-donor quantum dot in silicon nano-transistors. Appl. Phys. Lett. 27 February 2017; 110 (9): 093107. https://doi.org/10.1063/1.4977836
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