The present work reports the fabrication of a ferroelectric tunnel junction based on a CMOS compatible 2.8 nm-thick Hf0.5Zr0.5O2 tunnel barrier. It presents a comprehensive study of the electronic properties of the Pt/Hf0.5Zr0.5O2/Pt system by X-ray photoelectron and UV-Visible spectroscopies. Furthermore, two different scanning probe techniques (Piezoresponse Force Microscopy and conductive-AFM) were used to demonstrate the ferroelectric behavior of the ultrathin Hf0.5Zr0.5O2 layer as well as the typical current-voltage characteristic of a ferroelectric tunnel junction device. Finally, a direct tunneling model across symmetric barriers was used to correlate electronic and electric transport properties of the ferroelectric tunnel junction system, demonstrating a large tunnel electroresistance effect with a tunneling electroresistance effect ratio of 20.
Tunneling electroresistance effect in a Pt/Hf0.5Zr0.5O2/Pt structure
F. Ambriz-Vargas, G. Kolhatkar, R. Thomas, R. Nouar, A. Sarkissian, C. Gomez-Yáñez, M. A. Gauthier, A. Ruediger; Tunneling electroresistance effect in a Pt/Hf0.5Zr0.5O2/Pt structure. Appl. Phys. Lett. 27 February 2017; 110 (9): 093106. https://doi.org/10.1063/1.4977028
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