In this contribution, we present a method to form free-standing cubic silicon carbide (3C-SiC) membranes in-situ during the growth stage. To do so, we exploit the presence of voids in the silicon (Si) epilayer underneath the 3C-SiC membrane, in stark contrast to the conventional view of voids as defects. The shape and the size of the 3C-SiC membranes can be controlled by a preceding patterning step of the Si epilayer. Afterwards, by controlling the expansion of voids in Si, the structured sacrificial layer is consumed during the 3C-SiC growth step. Consequently, the membranes are grown and released simultaneously in a single step process. This straightforward technique is expected to markedly simplify the fabrication process of membranes by reducing the fabrication duration and cost. Furthermore, it helps to overcome several technical issues and presents the cornerstone for micro and nano-electromechanical systems applications, profiting from the outstanding properties of cubic silicon carbide.
Turning the undesired voids in silicon into a tool: In-situ fabrication of free-standing 3C-SiC membranes
Rami Khazaka, Jean François Michaud, Philippe Vennéguès, Daniel Alquier, Marc Portail; Turning the undesired voids in silicon into a tool: In-situ fabrication of free-standing 3C-SiC membranes. Appl. Phys. Lett. 20 February 2017; 110 (8): 081602. https://doi.org/10.1063/1.4977033
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