In this contribution, we present a method to form free-standing cubic silicon carbide (3C-SiC) membranes in-situ during the growth stage. To do so, we exploit the presence of voids in the silicon (Si) epilayer underneath the 3C-SiC membrane, in stark contrast to the conventional view of voids as defects. The shape and the size of the 3C-SiC membranes can be controlled by a preceding patterning step of the Si epilayer. Afterwards, by controlling the expansion of voids in Si, the structured sacrificial layer is consumed during the 3C-SiC growth step. Consequently, the membranes are grown and released simultaneously in a single step process. This straightforward technique is expected to markedly simplify the fabrication process of membranes by reducing the fabrication duration and cost. Furthermore, it helps to overcome several technical issues and presents the cornerstone for micro and nano-electromechanical systems applications, profiting from the outstanding properties of cubic silicon carbide.
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20 February 2017
Research Article|
February 21 2017
Turning the undesired voids in silicon into a tool: In-situ fabrication of free-standing 3C-SiC membranes
Rami Khazaka
;
Rami Khazaka
a)
1
Université François Rabelais
, Tours, GREMAN, CNRS-UMR 7347, 16 rue Pierre et Marie Curie, BP 7155, 37071 Tours Cedex 2, France
2
CRHEA
, CNRS-UPR10, rue Bernard Gregory, 06560 Valbonne, France
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Jean François Michaud
;
Jean François Michaud
1
Université François Rabelais
, Tours, GREMAN, CNRS-UMR 7347, 16 rue Pierre et Marie Curie, BP 7155, 37071 Tours Cedex 2, France
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Philippe Vennéguès;
Philippe Vennéguès
2
CRHEA
, CNRS-UPR10, rue Bernard Gregory, 06560 Valbonne, France
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Daniel Alquier;
Daniel Alquier
1
Université François Rabelais
, Tours, GREMAN, CNRS-UMR 7347, 16 rue Pierre et Marie Curie, BP 7155, 37071 Tours Cedex 2, France
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Marc Portail
Marc Portail
2
CRHEA
, CNRS-UPR10, rue Bernard Gregory, 06560 Valbonne, France
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a)
Author to whom correspondence should be addressed. Electronic mail: rami.khazaka@polytechnique.edu
Appl. Phys. Lett. 110, 081602 (2017)
Article history
Received:
December 29 2016
Accepted:
February 07 2017
Citation
Rami Khazaka, Jean François Michaud, Philippe Vennéguès, Daniel Alquier, Marc Portail; Turning the undesired voids in silicon into a tool: In-situ fabrication of free-standing 3C-SiC membranes. Appl. Phys. Lett. 20 February 2017; 110 (8): 081602. https://doi.org/10.1063/1.4977033
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