Metal-semiconductor-field-effect-transistors (MESFETs) with silver oxide Schottky gates on zinc tin oxide (ZTO) channels showed fundamental differences in stability compared to conventional amorphous-oxide semiconductor thin-film-transistors (AOS-TFTs). The most severe negative-bias-temperature and negative-bias-illumination-temperature stress conditions, which usually degrade the performance of AOS-TFTs, significantly improved the switching characteristic of these ZTO MESFETs, producing devices with on:off current ratios, mobilities, and subthreshold swings of 8 × 106, 12 cm2 V−1 s−1, and 180 mV/dec, respectively. Further analysis confirmed that both negative bias and temperature (65 °C) were simultaneously required to produce this permanent effect that was linked to the electromigration of ionized donors from the MESFET depletion-region.
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13 February 2017
Research Article|
February 14 2017
Zinc tin oxide metal semiconductor field effect transistors and their improvement under negative bias (illumination) temperature stress
G. T. Dang;
G. T. Dang
a)
1Center for Nanotechnology at Research Institute, School of Systems Engineering,
Kochi University of Technology
, Kami, Kochi 782-8502, Japan
2The MacDiarmid Institute for Advanced Materials and Nanotechnology, Department of Electrical and Computer Engineering,
University of Canterbury
, Christchurch 8014, New Zealand
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T. Kawaharamura;
T. Kawaharamura
1Center for Nanotechnology at Research Institute, School of Systems Engineering,
Kochi University of Technology
, Kami, Kochi 782-8502, Japan
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M. Furuta;
M. Furuta
3Department of Environmental Science and Engineering,
Kochi University of Technology
, Kami, Kochi 780-8502, Japan
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M. W. Allen
M. W. Allen
2The MacDiarmid Institute for Advanced Materials and Nanotechnology, Department of Electrical and Computer Engineering,
University of Canterbury
, Christchurch 8014, New Zealand
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G. T. Dang
1,2,a)
T. Kawaharamura
1
M. Furuta
3
M. W. Allen
2
1Center for Nanotechnology at Research Institute, School of Systems Engineering,
Kochi University of Technology
, Kami, Kochi 782-8502, Japan
2The MacDiarmid Institute for Advanced Materials and Nanotechnology, Department of Electrical and Computer Engineering,
University of Canterbury
, Christchurch 8014, New Zealand
3Department of Environmental Science and Engineering,
Kochi University of Technology
, Kami, Kochi 780-8502, Japan
a)
Electronic mail: [email protected]
Appl. Phys. Lett. 110, 073502 (2017)
Article history
Received:
September 21 2016
Accepted:
January 25 2017
Citation
G. T. Dang, T. Kawaharamura, M. Furuta, M. W. Allen; Zinc tin oxide metal semiconductor field effect transistors and their improvement under negative bias (illumination) temperature stress. Appl. Phys. Lett. 13 February 2017; 110 (7): 073502. https://doi.org/10.1063/1.4976196
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