Negative thermal quenching of below-bandgap photoluminescence in InPBi Available to Purchase

This paper reports a temperature-dependent (10–280 K) photoluminescence (PL) study of below-bandgap electron-hole recombinations and anomalous negative thermal quenching of PL intensity in InP_1–xBi_x (x = 0.019 and 0.023). Four PL features are well resolved by curve-fitting of the PL spectra, of which the energies exhibit different temperature dependence. The integral intensities of the two high-energy features diminish monotonically as temperature rises up, while those of the two low-energy features decrease below but increase anomalously above 180 K. A phenomenological model is established that the residual electrons in the final state of the PL transition transfer into nonradiative state via thermal hopping, and the thermal hopping produces in parallel holes in the final state and hence enhances the radiative recombination significantly. A reasonable interpretation of the PL processes in InPBi is achieved, and the activation energies of the PL quenching and thermal hopping are deduced.