This paper reports a temperature-dependent (10–280 K) photoluminescence (PL) study of below-bandgap electron-hole recombinations and anomalous negative thermal quenching of PL intensity in InP1–xBix (x = 0.019 and 0.023). Four PL features are well resolved by curve-fitting of the PL spectra, of which the energies exhibit different temperature dependence. The integral intensities of the two high-energy features diminish monotonically as temperature rises up, while those of the two low-energy features decrease below but increase anomalously above 180 K. A phenomenological model is established that the residual electrons in the final state of the PL transition transfer into nonradiative state via thermal hopping, and the thermal hopping produces in parallel holes in the final state and hence enhances the radiative recombination significantly. A reasonable interpretation of the PL processes in InPBi is achieved, and the activation energies of the PL quenching and thermal hopping are deduced.
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30 January 2017
Research Article|
February 01 2017
Negative thermal quenching of below-bandgap photoluminescence in InPBi Available to Purchase
Xiren Chen;
Xiren Chen
1National Laboratory for Infrared Physics, Shanghai Institute of Technical Physics,
Chinese Academy of Sciences
, 200083 Shanghai, China
2State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology,
Chinese Academy of Sciences
, 200050 Shanghai, China
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Xiaoyan Wu
;
Xiaoyan Wu
2State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology,
Chinese Academy of Sciences
, 200050 Shanghai, China
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Li Yue;
Li Yue
2State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology,
Chinese Academy of Sciences
, 200050 Shanghai, China
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Liangqing Zhu;
Liangqing Zhu
1National Laboratory for Infrared Physics, Shanghai Institute of Technical Physics,
Chinese Academy of Sciences
, 200083 Shanghai, China
3Key Laboratory of Polar Materials and Devices,
East China Normal University
, 200062 Shanghai, China
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Wenwu Pan
;
Wenwu Pan
2State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology,
Chinese Academy of Sciences
, 200050 Shanghai, China
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Zhen Qi;
Zhen Qi
1National Laboratory for Infrared Physics, Shanghai Institute of Technical Physics,
Chinese Academy of Sciences
, 200083 Shanghai, China
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Shumin Wang;
Shumin Wang
a)
2State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology,
Chinese Academy of Sciences
, 200050 Shanghai, China
4Photonic Laboratory, Department of Microtechnology and Nanoscience,
Chalmers University of Technology
, S-412 96 Göteborg, Sweden
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Xiren Chen
1,2
Xiaoyan Wu
2
Li Yue
2
Liangqing Zhu
1,3
Wenwu Pan
2
Zhen Qi
1
Shumin Wang
2,4,a)
Jun Shao
1,b)
1National Laboratory for Infrared Physics, Shanghai Institute of Technical Physics,
Chinese Academy of Sciences
, 200083 Shanghai, China
2State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology,
Chinese Academy of Sciences
, 200050 Shanghai, China
3Key Laboratory of Polar Materials and Devices,
East China Normal University
, 200062 Shanghai, China
4Photonic Laboratory, Department of Microtechnology and Nanoscience,
Chalmers University of Technology
, S-412 96 Göteborg, Sweden
a)
Electronic mail: [email protected]
b)
Author to whom correspondence should be addressed. Electronic mail: [email protected]
Appl. Phys. Lett. 110, 051903 (2017)
Article history
Received:
November 03 2016
Accepted:
January 23 2017
Citation
Xiren Chen, Xiaoyan Wu, Li Yue, Liangqing Zhu, Wenwu Pan, Zhen Qi, Shumin Wang, Jun Shao; Negative thermal quenching of below-bandgap photoluminescence in InPBi. Appl. Phys. Lett. 30 January 2017; 110 (5): 051903. https://doi.org/10.1063/1.4975586
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