We investigated tunneling anisotropic magnetoresistance (TAMR) at the interface between pentacene and La0.7Sr0.3MnO3 (LSMO) thin films prepared on SrTiO3 (STO) (110) substrates. The dependence of the TAMR ratio on the magnetic field strength was approximately ten times larger than that of the magnetic field angle at a high magnetic field. This large difference in the TAMR ratio is explained by the interface magnetic anisotropy of strain-induced LSMO thin films on a STO (110) substrate, which has an easy axis with an out-of-plane component. We also note that the TAMR owing to out-of-plane magnetization was positive at each angle of the in-plane magnetic field. This result implies that active control of the interface magnetic anisotropy between organic materials and ferromagnetic metals should realize nonvolatile and high-efficiency TAMR devices.
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16 January 2017
Research Article|
January 17 2017
Large tunneling anisotropic magnetoresistance in La0.7Sr0.3MnO3/pentacene/Cu structures prepared on SrTiO3 (110) substrates Available to Purchase
Takeshi Kamiya;
Takeshi Kamiya
Division of Materials Physics, Graduate School of Engineering Science,
Osaka University
, Machikaneyama-cho 1-3, Toyonaka, Osaka 560-8531, Japan
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Chihiro Miyahara;
Chihiro Miyahara
Division of Materials Physics, Graduate School of Engineering Science,
Osaka University
, Machikaneyama-cho 1-3, Toyonaka, Osaka 560-8531, Japan
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Hirokazu Tada
Hirokazu Tada
a)
Division of Materials Physics, Graduate School of Engineering Science,
Osaka University
, Machikaneyama-cho 1-3, Toyonaka, Osaka 560-8531, Japan
Search for other works by this author on:
Takeshi Kamiya
Division of Materials Physics, Graduate School of Engineering Science,
Osaka University
, Machikaneyama-cho 1-3, Toyonaka, Osaka 560-8531, Japan
Chihiro Miyahara
Division of Materials Physics, Graduate School of Engineering Science,
Osaka University
, Machikaneyama-cho 1-3, Toyonaka, Osaka 560-8531, Japan
Hirokazu Tada
a)
Division of Materials Physics, Graduate School of Engineering Science,
Osaka University
, Machikaneyama-cho 1-3, Toyonaka, Osaka 560-8531, Japan
a)
Author to whom correspondence should be addressed. Electronic mail: [email protected]
Appl. Phys. Lett. 110, 032401 (2017)
Article history
Received:
November 25 2016
Accepted:
January 03 2017
Citation
Takeshi Kamiya, Chihiro Miyahara, Hirokazu Tada; Large tunneling anisotropic magnetoresistance in La0.7Sr0.3MnO3/pentacene/Cu structures prepared on SrTiO3 (110) substrates. Appl. Phys. Lett. 16 January 2017; 110 (3): 032401. https://doi.org/10.1063/1.4974079
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