Here we report on the fabrication and optical characterization of InP-based L3 photonic crystal (PhC) microcavities embedded with a medium density InAs/InP quantum dots (QDs) emitting at telecom wavelengths. The QDs are grown by solid source molecular beam epitaxy using a ripening technique. Micro-photoluminescence (μ-PL) measurements of PhC samples reveal sharp cavity modes with quality factors exceeding 8500. QDs emit highly linear-polarized light at telecom wavelengths with resolution-limited spectral linewidth below 50 μeV. Enhanced PL intensity of QDs in PhC is observed in comparison to the PL intensity of QDs in bulk semiconductors. The combination of excitation power-dependent and polarization-resolved μ-PL measurements reveal the existence of an exciton-biexciton system with a small fine-structure splitting.
Telecom wavelength emitting single quantum dots coupled to InP-based photonic crystal microcavities
A. Kors, K. Fuchs, M. Yacob, J. P. Reithmaier, M. Benyoucef; Telecom wavelength emitting single quantum dots coupled to InP-based photonic crystal microcavities. Appl. Phys. Lett. 16 January 2017; 110 (3): 031101. https://doi.org/10.1063/1.4974207
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