Searching for two-dimensional (2D) realistic materials that are able to realize room-temperature quantum spin Hall effects is currently a growing field. Here, through ab initio calculations, we identify arsenene oxide, AsO, as an excellent candidate, which demonstrates high stability, flexibility, and tunable spin-orbit coupling gaps. In contrast to known pristine or functionalized arsenene, the maximum nontrivial bandgap of AsO reaches 89 meV and can be further enhanced to 130 meV under biaxial strain. By sandwiching 2D AsO between boron nitride sheets, we propose a quantum well in which the band topology of AsO is preserved with a sizeable bandgap. Considering that AsO having fully oxidized surfaces are naturally stable against surface oxidization and degradation, this functionality provides a viable strategy for designing topological quantum devices operating at room temperature.
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