The formation of a magnetic dead layer at the interfaces of the perovskite oxide La0.67Sr0.33MnO3 (LSMO) is one of the crucial issues for its spintronic applications. In this letter, we report the reduction of the dead layer by growing LSMO on a LaMnO3 (LMO) layer. Furthermore, we detect tunneling magnetoresistance (TMR) in an LSMO/LMO/LSMO heterostructure. The obtained sign of the TMR was negative, but it changed to positive after annealing. This unusual negative TMR can be attributed to the intrinsic structural difference between the upper and lower interfaces of LMO and can be understood by a weak antiferromagnetic metallic thin layer formed at the upper LSMO/LMO interface. This layer is thought to be formed by diffused Sr atoms and oxygen vacancies in the LMO barrier. Our results indicate that control of intermixing of atoms at the interfaces is a key to controlling the TMR.
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22 May 2017
Research Article|
May 26 2017
Reduction of the magnetic dead layer and observation of tunneling magnetoresistance in La0.67Sr0.33MnO3-based heterostructures with a LaMnO3 layer Available to Purchase
Tatsuya Matou;
Tatsuya Matou
a)
1
Department of Electrical Engineering and Information Systems, The University of Tokyo
, 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-8656, Japan
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Kento Takeshima;
Kento Takeshima
1
Department of Electrical Engineering and Information Systems, The University of Tokyo
, 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-8656, Japan
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Le Duc Anh;
Le Duc Anh
1
Department of Electrical Engineering and Information Systems, The University of Tokyo
, 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-8656, Japan
2
Institute of Engineering Innovation, Graduate School of Engineering, The University of Tokyo
, 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-8656, Japan
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Munetoshi Seki;
Munetoshi Seki
1
Department of Electrical Engineering and Information Systems, The University of Tokyo
, 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-8656, Japan
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Hitoshi Tabata
;
Hitoshi Tabata
1
Department of Electrical Engineering and Information Systems, The University of Tokyo
, 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-8656, Japan
3
Center for Spintronics Research Network (CSRN), Graduate School of Engineering, The University of Tokyo
, 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-8656, Japan
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Masaaki Tanaka;
Masaaki Tanaka
b)
1
Department of Electrical Engineering and Information Systems, The University of Tokyo
, 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-8656, Japan
3
Center for Spintronics Research Network (CSRN), Graduate School of Engineering, The University of Tokyo
, 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-8656, Japan
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Shinobu Ohya
Shinobu Ohya
c)
1
Department of Electrical Engineering and Information Systems, The University of Tokyo
, 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-8656, Japan
2
Institute of Engineering Innovation, Graduate School of Engineering, The University of Tokyo
, 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-8656, Japan
3
Center for Spintronics Research Network (CSRN), Graduate School of Engineering, The University of Tokyo
, 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-8656, Japan
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Tatsuya Matou
1,a)
Kento Takeshima
1
Le Duc Anh
1,2
Munetoshi Seki
1
Hitoshi Tabata
1,3
Masaaki Tanaka
1,3,b)
Shinobu Ohya
1,2,3,c)
1
Department of Electrical Engineering and Information Systems, The University of Tokyo
, 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-8656, Japan
2
Institute of Engineering Innovation, Graduate School of Engineering, The University of Tokyo
, 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-8656, Japan
3
Center for Spintronics Research Network (CSRN), Graduate School of Engineering, The University of Tokyo
, 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-8656, Japan
a)
Electronic mail: [email protected]
b)
Electronic mail: [email protected]
c)
Electronic mail: [email protected]
Appl. Phys. Lett. 110, 212406 (2017)
Article history
Received:
January 27 2017
Accepted:
May 16 2017
Citation
Tatsuya Matou, Kento Takeshima, Le Duc Anh, Munetoshi Seki, Hitoshi Tabata, Masaaki Tanaka, Shinobu Ohya; Reduction of the magnetic dead layer and observation of tunneling magnetoresistance in La0.67Sr0.33MnO3-based heterostructures with a LaMnO3 layer. Appl. Phys. Lett. 22 May 2017; 110 (21): 212406. https://doi.org/10.1063/1.4984297
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