Enhancement-mode (E-mode) hydrogenated diamond (H-diamond) metal-oxide-semiconductor field-effect transistors (MOSFETs) are fabricated with an Y2O3 oxide insulator grown on the H-diamond directly using an electron beam evaporator. The depletion region of the capacitance-voltage curve for the MOS capacitor shifts to the left hand side relative to 0 V, which indicates the existence of positive charges in the Y2O3 film. There are distinct pinch-off and p-type channel characteristics of the Y2O3/H-diamond MOSFETs. The maximum drain-source current for the MOSFET without interspace between the source/drain and the gate (LS/D-G) is −114.6 mA mm−1. Those for the MOSFETs with LS/D-G are decreased from −11.0 to −2.1 mA mm−1 with the gate length increasing from 3.3 ± 0.1 to 15.4 ± 0.1 μm. Threshold voltages for all the MOSFETs are negative, indicating their E-mode characteristics. Negatively charged adsorbates are one of the necessary conditions for hole accumulation of the H-diamond channel layer, which are possibly compensated by the positive charges in the Y2O3 film, resulting in E-mode characteristics of the MOSFETs.
Enhancement-mode hydrogenated diamond metal-oxide-semiconductor field-effect transistors with Y2O3 oxide insulator grown by electron beam evaporator
J. W. Liu, H. Oosato, M. Y. Liao, Y. Koide; Enhancement-mode hydrogenated diamond metal-oxide-semiconductor field-effect transistors with Y2O3 oxide insulator grown by electron beam evaporator. Appl. Phys. Lett. 15 May 2017; 110 (20): 203502. https://doi.org/10.1063/1.4983091
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