We present an ultra-high vacuum scanning tunneling microscopy study of structural defects in molybdenum disulfide thin films grown on silicon substrates by chemical vapor deposition. A distinctive type of grain boundary periodically arranged inside an isolated triangular domain, along with other inter-domain grain boundaries of various types, is observed. These periodic defects, about 50 nm apart and a few nanometers in width, remain hidden in optical or low-resolution microscopy studies. We report a complex growth mechanism that produces 2D nucleation and spiral growth features that can explain the topography in our films.
Intra-domain periodic defects in monolayer MoS2
Anupam Roy, Rudresh Ghosh, Amritesh Rai, Atresh Sanne, Kyounghwan Kim, Hema C. P. Movva, Rik Dey, Tanmoy Pramanik, Sayema Chowdhury, Emanuel Tutuc, Sanjay K. Banerjee; Intra-domain periodic defects in monolayer MoS2. Appl. Phys. Lett. 15 May 2017; 110 (20): 201905. https://doi.org/10.1063/1.4983789
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