This article reports the results on the piezo-Hall effect in single crystal n-type 3C-SiC(100) having a low carrier concentration. The effect of the crystallographic orientation on the piezo-Hall effect has been investigated by applying stress to the Hall devices fabricated in different crystallographic directions. Single crystal n-type 3C-SiC(100) and 3C-SiC(111) were grown by low pressure chemical vapor deposition at 1250 °C. Fundamental piezo-Hall coefficients were obtained using the piezo-Hall effect measurements as P11 = (–29 ± 1.3) × 10−11 Pa−1, P12 = (11.06 ± 0.5)× 10−11 Pa−1, and P44 = (–3.4 ± 0.7) × 10−11 Pa−1. It has been observed that the piezo-Hall coefficients of n-type 3C-SiC(100) show a completely different behavior as compared to that of p-type 3C-SiC.
Piezo-Hall effect and fundamental piezo-Hall coefficients of single crystal n-type 3C-SiC(100) with low carrier concentration
Afzaal Qamar, Dzung Viet Dao, Toan Dinh, Alan Iacopi, Glenn Walker, Hoang-Phuong Phan, Leonie Hold, Sima Dimitrijev; Piezo-Hall effect and fundamental piezo-Hall coefficients of single crystal n-type 3C-SiC(100) with low carrier concentration. Appl. Phys. Lett. 17 April 2017; 110 (16): 162903. https://doi.org/10.1063/1.4980849
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