The photoinduced entropy of InGaN/GaN p-i-n nanowires was investigated using temperature-dependent (6–290 K) photoluminescence. We also analyzed the photocarrier dynamics in the InGaN active regions using time-resolved photoluminescence. An increasing trend in the amount of generated photoinduced entropy of the system above 250 K was observed, while we observed an oscillatory trend in the generated entropy of the system below 250 K that stabilizes between 200 and 250 K. Strong exciton localization in indium-rich clusters, carrier trapping by surface defect states, and thermodynamic entropy effects were examined and related to the photocarrier dynamics. We conjecture that the amount of generated photoinduced entropy of the system increases as more non-radiative channels become activated and more shallowly localized carriers settle into deeply localized states; thereby, additional degrees of uncertainty related to the energy of states involved in thermionic transitions are attained.
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17 April 2017
Research Article|
April 19 2017
Photoinduced entropy of InGaN/GaN p-i-n double-heterostructure nanowires
Nasir Alfaraj
;
Nasir Alfaraj
1Advanced Semiconductor Laboratory,
King Abdullah University of Science and Technology (KAUST)
, Thuwal 23955-6900, Kingdom of Saudi Arabia
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Somak Mitra;
Somak Mitra
2Semiconductor and Material Spectroscopy Laboratory,
King Abdullah University of Science and Technology (KAUST)
, Thuwal 23955-6900, Kingdom of Saudi Arabia
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Feng Wu;
Feng Wu
1Advanced Semiconductor Laboratory,
King Abdullah University of Science and Technology (KAUST)
, Thuwal 23955-6900, Kingdom of Saudi Arabia
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Idris A. Ajia
;
Idris A. Ajia
2Semiconductor and Material Spectroscopy Laboratory,
King Abdullah University of Science and Technology (KAUST)
, Thuwal 23955-6900, Kingdom of Saudi Arabia
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Bilal Janjua;
Bilal Janjua
3Photonics Laboratory,
King Abdullah University of Science and Technology (KAUST)
, Thuwal 23955-6900, Kingdom of Saudi Arabia
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Aditya Prabaswara;
Aditya Prabaswara
3Photonics Laboratory,
King Abdullah University of Science and Technology (KAUST)
, Thuwal 23955-6900, Kingdom of Saudi Arabia
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Renad A. Aljefri;
Renad A. Aljefri
1Advanced Semiconductor Laboratory,
King Abdullah University of Science and Technology (KAUST)
, Thuwal 23955-6900, Kingdom of Saudi Arabia
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Haiding Sun;
Haiding Sun
1Advanced Semiconductor Laboratory,
King Abdullah University of Science and Technology (KAUST)
, Thuwal 23955-6900, Kingdom of Saudi Arabia
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Tien Khee Ng
;
Tien Khee Ng
3Photonics Laboratory,
King Abdullah University of Science and Technology (KAUST)
, Thuwal 23955-6900, Kingdom of Saudi Arabia
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Boon S. Ooi;
Boon S. Ooi
3Photonics Laboratory,
King Abdullah University of Science and Technology (KAUST)
, Thuwal 23955-6900, Kingdom of Saudi Arabia
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Iman S. Roqan;
Iman S. Roqan
a)
2Semiconductor and Material Spectroscopy Laboratory,
King Abdullah University of Science and Technology (KAUST)
, Thuwal 23955-6900, Kingdom of Saudi Arabia
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Xiaohang Li
Xiaohang Li
b)
1Advanced Semiconductor Laboratory,
King Abdullah University of Science and Technology (KAUST)
, Thuwal 23955-6900, Kingdom of Saudi Arabia
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a)
Electronic mail: iman.roqan@kaust.edu.sa
b)
Electronic mail: xiaohang.li@kaust.edu.sa
Appl. Phys. Lett. 110, 161110 (2017)
Article history
Received:
January 23 2017
Accepted:
April 06 2017
Citation
Nasir Alfaraj, Somak Mitra, Feng Wu, Idris A. Ajia, Bilal Janjua, Aditya Prabaswara, Renad A. Aljefri, Haiding Sun, Tien Khee Ng, Boon S. Ooi, Iman S. Roqan, Xiaohang Li; Photoinduced entropy of InGaN/GaN p-i-n double-heterostructure nanowires. Appl. Phys. Lett. 17 April 2017; 110 (16): 161110. https://doi.org/10.1063/1.4981252
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