Amorphous InGaZnO thin film transistors (a-IGZO TFTs) with an etching-stop layer (ESL) exhibit an anomalous negative shift of threshold voltage (Vth) under positive bias temperature stress. TFTs with wider and shorter channels show a clear hump phenomenon, resulting from the existence of both main channels and parasitic channels. The electrons trapped in the gate insulator are responsible for the positive shift in the main channel characteristics. The electrons trapped near the IGZO edges and the holes injected into the ESL layer above InGaZnO (IGZO) jointly determine the shift of the parasitic TFT performance.
References
1.
K.
Nomura
, H.
Ohta
, A.
Takagi
, T.
Kamiya
, M.
Hirano
, and H.
Hosono
, Nature
432
, 488
–492
(2004
).2.
K.-H.
Liu
, T.-C.
Chang
, K.-C.
Chang
, T.-M.
Tsai
, T.-Y.
Hsieh
, M.-C.
Chen
, B.-L.
Yeh
, and W.-C.
Chou
, Appl. Phys. Lett.
104
, 103501
(2014
).3.
K.-H.
Liu
, T.-C.
Chang
, M.-S.
Wu
, Y.-S.
Hung
, P.-H.
Hung
, T.-Y.
Hsieh
, W.-C.
Chou
, A.-K.
Chu
, S. M.
Sze
, and B.-L.
Yeh
, Appl. Phys. Lett.
104
, 133503
(2014
).4.
M.-Y.
Tsai
, T.-C.
Chang
, A.-K.
Chu
, T.-C.
Chen
, T.-Y.
Hsieh
, K.-Y.
Lin
, W.-W.
Tsai
, W.-J.
Chiang
, and J.-Y.
Yan
, Appl. Phys. Lett.
103
, 143508
(2013
).5.
B.
Yaglioglu
, H. Y.
Yeom
, R.
Beresford
, and D. C.
Paine
, Appl. Phys. Lett.
89
, 062103-3
(2006
).6.
J.
Socratous
, K. K.
Banger
, Y.
Vaynzof
, A.
Sadhanala
, A. D.
Brown
, A.
Sepe
, U.
Steiner
, and H.
Sirringhaus
, Adv. Funct. Mater.
25
, 1873
–1885
(2015
).7.
P.-T.
Liu
, Y.-T.
Chou
, and L.-F.
Teng
, Appl. Phys. Lett.
95
, 233504
(2009
).8.
S.
Aikawa
, P.
Darmawan
, K.
Yanagisawa
, T.
Nabatame
, Y.
Abe
, and K.
Tsukagoshi
, Appl. Phys. Lett.
102
, 102101
(2013
).9.
Z.
Yang
, T.
Meng
, Q.
Zhang
, and H.-P. D.
Shieh
, IEEE Electron Device Lett.
37
, 437
–440
(2016
).10.
J.
Yang
, S.
Pi
, Y.
Han
, R.
Fu
, T.
Meng
, and Q.
Zhang
, IEEE Trans. Electron Devices
63
, 1904
–1909
(2016
).11.
M. D. H.
Chowdhury
, P.
Migliorato
, and J.
Jang
, Appl. Phys. Lett.
97
, 173506
(2010
).12.
J. K.
Jeong
, H. W.
Yang
, J. H.
Jeong
, Y.-G.
Mo
, and H. D.
Kim
, Appl. Phys. Lett.
93
, 123508
(2008
).13.
Y.
Han
, C.
Cui
, J.
Yang
, M.-Y.
Tsai
, T.-C.
Chang
, and Q.
Zhang
, IEEE Trans. Device Mater. Reliab.
16
, 20
–24
(2016
).14.
A.
Suresh
and J.
Muth
, Appl. Phys. Lett.
92
, 033502
(2008
).15.
Y.-M.
Kim
, K.-S.
Jeong
, H.-J.
Yun
, S.-D.
Yang
, S.-Y.
Lee
, Y.-C.
Kim
, J.-K.
Jeong
, H.-D.
Lee
, and G.-W.
Lee
, Appl. Phys. Lett.
102
, 173502
(2013
).16.
M.
Mativenga
, M.
Seok
, and J.
Jang
, Appl. Phys. Lett.
99
, 122107
(2011
).17.
A.
Valletta
, P.
Gaucci
, L.
Mariucci
, G.
Fortunato
, and F.
Templier
, J. Appl. Phys.
104
, 124511
(2008
).18.
P.
Sallagoity
, M.
Ada-Hanifi
, M.
Paoli
, and M.
Haond
, IEEE Trans. Electron Devices
43
, 1900
–1906
(1996
).19.
C.-F.
Huang
, C.-Y.
Peng
, Y.-J.
Yang
, H.-C.
Sun
, H.-C.
Chang
, P.-S.
Kuo
, H.-L.
Chang
, C.-Z.
Liu
, and C. W.
Liu
, IEEE Electron Device Lett.
29
, 1332
–1335
(2008
).20.
M.
Furuta
, Y.
Kamada
, M.
Kimura
, T.
Hiramatsu
, T.
Matsuda
, H.
Furuta
, C.
Li
, S.
Fujita
, and T.
Hirao
, IEEE Electron Device Lett.
31
, 1257
–1259
(2010
).21.
S.-Y.
Huang
, T.-C.
Chang
, M.-C.
Chen
, S.-C.
Chen
, C.-T.
Tsai
, M.-C.
Hung
, C.-H.
Tu
, C.-H.
Chen
, J.-J.
Chang
, and W.-L.
Liau
, Electrochem. Solid-State Lett.
14
, H177
–H179
(2011
).22.
S.-H.
Choi
and M.-K.
Han
, Appl. Phys. Lett.
100
, 043503
(2012
).23.
J.-H.
Jeon
, S.-B.
Seo
, H.-S.
Park
, H.-H.
Choe
, J.-H.
Seo
, K.-C.
Park
, and S.-H. K.
Park
, J. Nanosci. Nanotechnol.
13
, 7535
–7539
(2013
).24.
J.
Lee
, S.
Choi
, S. K.
Kim
, S.-J.
Choi
, D. H.
Kim
, J.
Park
, and D. M.
Kim
, IEEE Electron Device Lett.
36
, 1047
–1049
(2015
).25.
J.
Yang
, R.
Fu
, Y.
Han
, T.
Meng
, and Q.
Zhang
, Europhys. Lett.
115
, 28006
(2016
).26.
E.
Fortunato
, P.
Barquinha
, and R.
Martins
, Adv. Mater.
24
, 2945
(2012
).27.
H.
Im
, H.
Song
, J.
Jeong
, Y.
Hong
, and Y.
Hong
, Jpn. J. Appl. Phys., Part 1
54
, 03CB03
(2015
).© 2017 Author(s).
2017
Author(s)
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