Resistively switching memory cells (ReRAM) are strong contenders for next-generation non-volatile random access memories. In this paper, we present ReRAM cells on flexible substrates consisting of Ag/spin-on-glass/PEDOT:PSS (poly(3,4-ethylenedioxythiophene) polystyrene sulfonate). The complete cell is fabricated using a standard inkjet printer without additional process steps. Investigations on the spin-on-glass insulating layer showed that low sintering temperatures are sufficient for good switching behavior, providing compatibility with various foils. The cells feature low switching voltages, low write currents, and a high ratio between high and low resistance state of 104. Combined with excellent switching characteristics under bending conditions, these results pave the way for low-power and low-cost memory devices for future applications in flexible electronics.
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Fully inkjet printed flexible resistive memory
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3 April 2017
Research Article|
April 04 2017
Fully inkjet printed flexible resistive memory
B. Huber;
B. Huber
a)
1Laboratory for Microsystems Technology,
Munich University of Applied Sciences
, Lothstrasse 34, 80335 Munich, Germany
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P. B. Popp;
P. B. Popp
1Laboratory for Microsystems Technology,
Munich University of Applied Sciences
, Lothstrasse 34, 80335 Munich, Germany
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M. Kaiser;
M. Kaiser
1Laboratory for Microsystems Technology,
Munich University of Applied Sciences
, Lothstrasse 34, 80335 Munich, Germany
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A. Ruediger;
A. Ruediger
2
INRS-EMT
, 1650 Blvd. Lionel-Boulet, Varennes, Québec J3X 1S2, Canada
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C. Schindler
C. Schindler
1Laboratory for Microsystems Technology,
Munich University of Applied Sciences
, Lothstrasse 34, 80335 Munich, Germany
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a)
Electronic mail: bernhard.huber@hm.edu
Appl. Phys. Lett. 110, 143503 (2017)
Article history
Received:
November 18 2016
Accepted:
February 26 2017
Citation
B. Huber, P. B. Popp, M. Kaiser, A. Ruediger, C. Schindler; Fully inkjet printed flexible resistive memory. Appl. Phys. Lett. 3 April 2017; 110 (14): 143503. https://doi.org/10.1063/1.4978664
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