Resistively switching memory cells (ReRAM) are strong contenders for next-generation non-volatile random access memories. In this paper, we present ReRAM cells on flexible substrates consisting of Ag/spin-on-glass/PEDOT:PSS (poly(3,4-ethylenedioxythiophene) polystyrene sulfonate). The complete cell is fabricated using a standard inkjet printer without additional process steps. Investigations on the spin-on-glass insulating layer showed that low sintering temperatures are sufficient for good switching behavior, providing compatibility with various foils. The cells feature low switching voltages, low write currents, and a high ratio between high and low resistance state of 104. Combined with excellent switching characteristics under bending conditions, these results pave the way for low-power and low-cost memory devices for future applications in flexible electronics.
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Research Article| April 04 2017
Fully inkjet printed flexible resistive memory
P. B. Popp;
B. Huber, P. B. Popp, M. Kaiser, A. Ruediger, C. Schindler; Fully inkjet printed flexible resistive memory. Appl. Phys. Lett. 3 April 2017; 110 (14): 143503. https://doi.org/10.1063/1.4978664
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