Strain engineering has attracted great attention, particularly for epitaxial films grown on a different substrate. Residual strains of SiC have been widely employed to form ultra-high frequency and high Q factor resonators. However, to date, the highest residual strain of SiC was reported to be limited to approximately 0.6%. Large strains induced into SiC could lead to several interesting physical phenomena, as well as significant improvement of resonant frequencies. We report an unprecedented nanostrain-amplifier structure with an ultra-high residual strain up to 8% utilizing the natural residual stress between epitaxial 3C-SiC and Si. In addition, the applied strain can be tuned by changing the dimensions of the amplifier structure. The possibility of introducing such a controllable and ultra-high strain will open the door to investigating the physics of SiC in large strain regimes and the development of ultra sensitive mechanical sensors.
Ultra-high strain in epitaxial silicon carbide nanostructures utilizing residual stress amplification
Hoang-Phuong Phan, Tuan-Khoa Nguyen, Toan Dinh, Ginnosuke Ina, Atieh Ranjbar Kermany, Afzaal Qamar, Jisheng Han, Takahiro Namazu, Ryutaro Maeda, Dzung Viet Dao, Nam-Trung Nguyen; Ultra-high strain in epitaxial silicon carbide nanostructures utilizing residual stress amplification. Appl. Phys. Lett. 3 April 2017; 110 (14): 141906. https://doi.org/10.1063/1.4979834
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