We demonstrate intersubband polaritons in the short-infrared wavelength range (λ < 3 μm) relying on the GaN/AlN semiconductor system. The demonstration is given for an intersubband transition centered at λ = 3.07 μm (E = 403 meV). The polaritonic dispersion is measured at room temperature: a Rabi energy of 53 meV (i.e., a minimum splitting of 106 meV), which represents 13.1% of the bare transition, is demonstrated. A metal-insulator-metal resonator architecture is employed, which proves to be efficient even at these short wavelengths.
Short-wave infrared (λ = 3 μm) intersubband polaritons in the GaN/AlN system
T. Laurent, J.-M. Manceau, E. Monroy, C. B. Lim, S. Rennesson, F. Semond, F. H. Julien, R. Colombelli; Short-wave infrared (λ = 3 μm) intersubband polaritons in the GaN/AlN system. Appl. Phys. Lett. 27 March 2017; 110 (13): 131102. https://doi.org/10.1063/1.4979084
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