X-ray nanodiffraction was used for the investigation of basal stacking faults in a-GaN microcrystallites. The method made it possible to find the positions of individual stacking faults in a chosen crystallite, and the resulting positions were compared with the observation of individual faults by electron channeling contrast in scanning electron microscopy. The x-ray diffraction data revealed that the faults occur in closely positioned pairs; the stacking faults in a pair have opposite displacement vectors.
Observation of individual stacking faults in GaN microcrystals by x-ray nanodiffraction
V. Holý, D. Kriegner, A. Lesnik, J. Bläsing, M. Wieneke, A. Dadgar, P. Harcuba; Observation of individual stacking faults in GaN microcrystals by x-ray nanodiffraction. Appl. Phys. Lett. 20 March 2017; 110 (12): 121905. https://doi.org/10.1063/1.4978870
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