We have studied the electronic properties of epitaxial graphene devices patterned in a meander shape with the length up to a few centimeters and the width of few tens of microns. These samples show a pronounced dependence of the resistance on temperature. Accurate comparison with the theory shows that this temperature dependence originates from the weak localization effect observed over a broad temperature range from 1.5 K up to 77 K. The comparison allows us to estimate the characteristic times related to quantum interference. In addition, a large resistance enhancement with temperature is observed at the quantum Hall regime near the filling factor of 2. Record high resistance and its strong temperature dependence are favorable for the construction of bolometric photodetectors.
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13 March 2017
Research Article|
March 17 2017
Strongly temperature dependent resistance of meander-patterned graphene
G. Yu. Vasileva;
G. Yu. Vasileva
1Institut für Festkörperphysik,
Universität Hannover
, Hannover 30167 Germany
2
Ioffe Institute
, 194021 St. Petersburg, Russia
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D. Smirnov;
D. Smirnov
1Institut für Festkörperphysik,
Universität Hannover
, Hannover 30167 Germany
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Yu. B. Vasilyev;
Yu. B. Vasilyev
2
Ioffe Institute
, 194021 St. Petersburg, Russia
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M. O. Nestoklon
;
M. O. Nestoklon
2
Ioffe Institute
, 194021 St. Petersburg, Russia
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N. S. Averkiev;
N. S. Averkiev
2
Ioffe Institute
, 194021 St. Petersburg, Russia
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S. Novikov;
S. Novikov
3Micro and Nanoscience Laboratory,
Aalto University
, Tietotie 3, FIN-02150 Espoo, Finland
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I. I. Kaya;
I. I. Kaya
4Faculty of Engineering and Natural Sciences,
Sabanci University
, 34956 Istanbul, Turkey
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R. J. Haug
R. J. Haug
1Institut für Festkörperphysik,
Universität Hannover
, Hannover 30167 Germany
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G. Yu. Vasileva
1,2
D. Smirnov
1
Yu. B. Vasilyev
2
M. O. Nestoklon
2
N. S. Averkiev
2
S. Novikov
3
I. I. Kaya
4
R. J. Haug
1
1Institut für Festkörperphysik,
Universität Hannover
, Hannover 30167 Germany
2
Ioffe Institute
, 194021 St. Petersburg, Russia
3Micro and Nanoscience Laboratory,
Aalto University
, Tietotie 3, FIN-02150 Espoo, Finland
4Faculty of Engineering and Natural Sciences,
Sabanci University
, 34956 Istanbul, Turkey
Appl. Phys. Lett. 110, 113104 (2017)
Article history
Received:
December 14 2016
Accepted:
March 01 2017
Citation
G. Yu. Vasileva, D. Smirnov, Yu. B. Vasilyev, M. O. Nestoklon, N. S. Averkiev, S. Novikov, I. I. Kaya, R. J. Haug; Strongly temperature dependent resistance of meander-patterned graphene. Appl. Phys. Lett. 13 March 2017; 110 (11): 113104. https://doi.org/10.1063/1.4978597
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