Lead sulfide quantum dot (PbS QD) solar cell efficiencies have improved rapidly over the past years due in large part to intelligent band alignment considerations. A pn-junction can be formed by connecting PbS layers with contrasting ligands. However, the resulting doping concentrations are typically low and cannot be effectively controlled. Here, we present a method of chemically p-doping films of thiol capped PbS QDs. P-n junction solar cells with increased doping in the p-type layer show improved short circuit current and fill factor, leading to an improvement in the power conversion efficiency from 7.1% to 7.6%. By examining Schottky diodes, field effect transistors, and the absorption spectra of treated and untreated PbS QDs, we show that the improved efficiency is due to the increased doping concentration in the thiol capped QD layer and to denser packing of the PbS QD film.
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6 March 2017
Research Article|
March 09 2017
Increased efficiency in pn-junction PbS QD solar cells via NaHS treatment of the p-type layer
Mark J. Speirs;
Mark J. Speirs
1Photophysics and OptoElectronics, Zernike Institute for Advanced Materials,
University of Groningen
, Nijenborgh 4, Groningen 9747 AG, The Netherlands
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Daniel M. Balazs
;
Daniel M. Balazs
1Photophysics and OptoElectronics, Zernike Institute for Advanced Materials,
University of Groningen
, Nijenborgh 4, Groningen 9747 AG, The Netherlands
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Dmitry N. Dirin;
Dmitry N. Dirin
2
Department of Chemistry and Applied Biosciences
, ETH Zürich, Wolfgang-Pauli-Str. 10, Zürich 8093, Switzerland
3
EMPA-Swiss Federal Laboratories for Materials Science and Technology
, Überlandstr. 129, Dübendorf 8600, Switzerland
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Maksym V. Kovalenko;
Maksym V. Kovalenko
2
Department of Chemistry and Applied Biosciences
, ETH Zürich, Wolfgang-Pauli-Str. 10, Zürich 8093, Switzerland
3
EMPA-Swiss Federal Laboratories for Materials Science and Technology
, Überlandstr. 129, Dübendorf 8600, Switzerland
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Maria Antonietta Loi
Maria Antonietta Loi
a)
1Photophysics and OptoElectronics, Zernike Institute for Advanced Materials,
University of Groningen
, Nijenborgh 4, Groningen 9747 AG, The Netherlands
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a)
Author to whom correspondence should be addressed. Electronic mail: [email protected]
Appl. Phys. Lett. 110, 103904 (2017)
Article history
Received:
January 10 2017
Accepted:
February 28 2017
Citation
Mark J. Speirs, Daniel M. Balazs, Dmitry N. Dirin, Maksym V. Kovalenko, Maria Antonietta Loi; Increased efficiency in pn-junction PbS QD solar cells via NaHS treatment of the p-type layer. Appl. Phys. Lett. 6 March 2017; 110 (10): 103904. https://doi.org/10.1063/1.4978444
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