Ga2O3 field-plated Schottky barrier diodes (FP-SBDs) were fabricated on a Si-doped n−-Ga2O3 drift layer grown by halide vapor phase epitaxy on a Sn-doped n+-Ga2O3 (001) substrate. The specific on-resistance of the Ga2O3 FP-SBD was estimated to be 5.1 mΩ·cm2. Successful field-plate engineering resulted in a high breakdown voltage of 1076 V. A larger-than-expected effective barrier height of 1.46 eV, which was extracted from the temperature-dependent current–voltage characteristics, could be caused by the effect of fluorine atoms delivered in a hydrofluoric acid solution process.
1-kV vertical Ga2O3 field-plated Schottky barrier diodes
Keita Konishi, Ken Goto, Hisashi Murakami, Yoshinao Kumagai, Akito Kuramata, Shigenobu Yamakoshi, Masataka Higashiwaki; 1-kV vertical Ga2O3 field-plated Schottky barrier diodes. Appl. Phys. Lett. 6 March 2017; 110 (10): 103506. https://doi.org/10.1063/1.4977857
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