Photoluminescence properties of highly strained Ge/Si multi-layer heterostructures with incorporated groups of laterally ordered SiGe quantum dots are studied in the wide range of temperatures from 4.2 to 300 K. The phononless radiative recombination mechanism in the groups is found to be dominating. A photoluminescence signal from SiGe quantum dots is observed up to 300 K. The activation energy ( meV) of photoluminescence thermal quenching can be associated with transition of holes from the laterally ordered quantum dots to the valence band states in the Ge wetting layer.
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