The electronic structure of bilayer graphene, where one of the layers possesses monovacancies, is studied under an external electric field using density functional theory. Our calculations show that Fermi-level pinning occurs in the bilayer graphene with defects under hole doping. However, under electron doping, the Fermi level rapidly increases at the critical gate voltage with an increasing electron concentration. In addition to the carrier species, the relative arrangement of the gate electrode to the defective graphene layer affects the Fermi energy position with respect to the carrier concentration. Because the distribution of the accumulated carrier depends on the electrode position, the quantum capacitance of bilayer graphene with defects depends on the electrode position.
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2 January 2017
Research Article|
January 03 2017
Fermi-level pinning of bilayer graphene with defects under an external electric field
Ken Kishimoto;
Ken Kishimoto
a)
Graduate School of Pure and Applied Sciences,
University of Tsukuba
, 1-1-1 Tennodai, Tsukuba, Ibaraki 305-8571, Japan
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Susumu Okada
Susumu Okada
b)
Graduate School of Pure and Applied Sciences,
University of Tsukuba
, 1-1-1 Tennodai, Tsukuba, Ibaraki 305-8571, Japan
Search for other works by this author on:
a)
E-mail: [email protected]
b)
E-mail: [email protected]
Appl. Phys. Lett. 110, 011601 (2017)
Article history
Received:
August 10 2016
Accepted:
December 15 2016
Citation
Ken Kishimoto, Susumu Okada; Fermi-level pinning of bilayer graphene with defects under an external electric field. Appl. Phys. Lett. 2 January 2017; 110 (1): 011601. https://doi.org/10.1063/1.4973426
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