Nature of traps responsible for the memory effect in Si3N4 still remains the subject matter of much discussion. Based on our quantum chemical simulation results, Si–Si bonds can be identified as traps for electrons and holes with localization energies falling within the ranges of Wte=1.21.7eV and Wth=0.91.4eV. Within the multiphonon trap ionization model, our experimental data on Si3N4 conductivity have allowed us to evaluate the thermal ionization energies of electron and hole traps in Si3N4 as Wte=Wth=1.4eV. The same value of 1.4 eV was obtained as half the Stokes shift of the 2.4 eV green photoluminescence line observed in Si3N4 films under excitation with 5.2 eV. Thus, the data obtained in the present study strongly suggest that Si–Si bonds are responsible for localization of electrons and holes in Si3N4.

1.
S. H.
Lin
,
A.
Chin
,
F. S.
Yeh
, and
S. P.
McAlister
,
Tech. Dig. - IEEE Int. Electron Dev. Meet.
2008
,
843
846
.
2.
A.
Padovani
,
L.
Larcher
,
D.
Heh
,
G.
Bersuker
,
V. D.
Marca
, and
P.
Pavan
,
Appl. Phys. Lett.
96
,
223505
(
2010
).
3.
B.
Prince
,
Vertical 3D Memory Technologies
(
John Wiley & Sons
,
Chichester, United Kingdoms
,
2014
),
p. 368
.
4.
W. L.
Warren
,
P. M.
Lenahan
, and
S. E.
Curry
,
Phys. Rev. Lett.
65
,
207
(
1990
).
5.
E.
Vianello
,
F.
Driussi
,
P.
Blaise
,
P.
Palestri
,
D.
Esseni
,
L.
Perniola
,
G.
Molas
,
B.
De Salvo
, and
L.
Selmi
,
IEEE Trans. Electron Devices
58
,
2490
(
2011
).
6.
D. T.
Krick
,
P. M.
Lenahan
, and
J.
Kanicki
,
Phys. Rev. B
38
,
8226
(
1988
).
7.
W. L.
Warren
and
P. M.
Lenahan
,
Phys. Rev. B
42
,
1773
(
1990
).
8.
L. E.
Hintzsche
,
C. M.
Fang
,
M.
Marsman
,
G.
Jordan
,
M. W. P. E.
Lamers
,
A. W.
Weeber
, and
G.
Kresse
,
Phys. Rev. B
88
,
155204
(
2013
).
9.
M.
Petersen
and
Y.
Roizin
,
Appl. Phys. Lett.
89
,
053511
(
2006
).
10.
M.-E.
Grillo
,
S. D.
Elliott
, and
C.
Freysoldt
,
Phys. Rev. B
83
,
085208
(
2011
).
11.
C. D.
Valentin
,
G.
Palma
, and
G.
Pacchioni
,
J. Phys. Chem. C
115
,
561
(
2011
).
12.
N.-M.
Park
,
C.-J.
Choi
,
T.-Y.
Seong
, and
S.-J.
Park
,
Phys. Rev. Lett.
86
,
1355
(
2001
).
13.
B. S.
Sahu
,
F.
Delachat
,
A.
Slaoui
,
M.
Carrada
,
G.
Ferblantier
, and
D.
Muller
,
Nano Res. Lett.
6
,
178
(
2011
).
14.
15.
P. W.
Anderson
,
Phys. Rev. Lett.
34
,
953
(
1975
).
16.
R. A.
Street
and
N. F.
Mott
,
Phys. Rev. Lett.
35
,
1293
(
1975
).
17.
V. A.
Gritsenko
,
Atomic and Electronic Structure of Amorphous Dielectrics in Silicon MIS Structures
(
Science
,
Novosibirsk
,
1993
), p.
280
.
18.
Y.
Roizin
and
V.
Gritsenko
, “
ONO structures in modern microelectronics. Material science, characterization and application
,” in
Dielectric Films for Advanced Microelectronics
, edited by
M. R.
Baklanov
,
M.
Greeen
, and
K.
Maex
(
Wiley & Sons
,
2007
), p.
486
.
19.
A. A.
Rastorguev
,
V. I.
Belyi
,
T. P.
Smirnova
,
L. V.
Yakovkina
,
M. V.
Zamoryanskaya
,
V. A.
Gritsenko
, and
H.
Wong
,
Phys. Rev. B
76
,
235315
(
2007
).
20.
P.
Giannozzi
,
S.
Baroni
,
N.
Bonini
,
M.
Calandra
,
R.
Car
,
C.
Cavazzoni
,
D.
Ceresoli
,
G. L.
Chiarotti
,
M.
Cococcioni
,
I.
Dabo
,
A.
Dal Corso
,
S.
de Gironcoli
,
S.
Fabris
,
G.
Fratesi
,
R.
Gebauer
,
U.
Gerstmann
,
C.
Gougoussis
,
A.
Kokalj
,
M.
Lazzeri
,
L.
Martin-Samos
,
N.
Marzari
,
F.
Mauri
,
R.
Mazzarello
,
S.
Paolini
,
A.
Pasquarello
,
L.
Paulatto
,
C.
Sbraccia
,
S.
Scandolo
,
G.
Sclauzero
,
A. P.
Seitsonen
,
A.
Smogunov
,
P.
Umari
, and
R. M.
Wentzcovitch
,
J. Phys.: Condens. Matter
21
,
395502
(
2009
).
21.
V.
Gritsenko
and
H.
Wong
,
Crit. Rev. Sol. State Mater. Sci.
36
,
129
(
2011
).
22.
V. A.
Gritsenko
,
E. E.
Meerson
, and
Yu. N.
Morokov
,
Phys. Rev. B
57
,
R2081
(
1998
).
23.
S. M.
Sze
,
Physics of Semiconductor Devices
(
Wiley
,
New York
,
1985
).
24.
S. S.
Makram-Ebeid
and
M.
Lannoo
,
Phys. Rev. B
25
,
6406
(
1982
).
25.
V. A.
Gritsenko
,
S. S.
Nekrashevich
,
V. V.
Vasilev
, and
A. V.
Shaposhnikov
,
Microelectron. Eng.
86
,
1866
(
2009
).
26.
V. A.
Gritsenko
,
J. Exp. Theor. Phys. Lett.
64
,
525
(
1996
).
27.
V. A.
Gritsenko
and
A. D.
Milov
,
J. Exp. Theor. Phys. Lett.
64
,
531
(
1996
).
28.
A. I.
Shames
,
V. A.
Gritsenko
,
R. I.
Samoilova
,
Yu. D.
Tzvetkov
,
L. S.
Braginsky
, and
M.
Roger
,
Sol. State Commun. B
118
,
129
(
2001
).
29.
S. S.
Shaimeev
,
V. A.
Gritsenko
, and
H.
Wong
,
Appl. Phys. Lett.
96
,
263510
(
2010
).
You do not currently have access to this content.