The impact of a parylene top-coating layer on the illumination and bias stress instabilities of indium-gallium-zinc oxide thin-film transistors (TFTs) is presented and discussed. The parylene coating substantially reduces the threshold voltage shift caused by continuous application of a gate bias and light exposure. The operational stability improves by 75%, and the light induced instability is reduced by 35%. The operational stability is quantified by fitting the threshold voltage shift with a stretched exponential model. Storage time as long as 7 months does not cause any measurable degradation on the electrical performance. It is proposed that parylene plays not only the role of an encapsulation layer but also of a defect passivation on the top semiconductor surface. It is also reported that depletion-mode TFTs are less sensitive to light induced instabilities. This is attributed to a defect neutralization process in the presence of free electrons.
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1 August 2016
Research Article|
August 05 2016
Improving positive and negative bias illumination stress stability in parylene passivated IGZO transistors Available to Purchase
Asal Kiazadeh;
Asal Kiazadeh
1Department of Materials Science, i3N/CENIMAT, Faculty of Science and Technology,
Universidade NOVA de Lisboa and CEMOP/UNINOVA
, Campus de Caparica, 2829-516 Caparica, Portugal
2
Universidade do Algarve
, FCT, 8000-139 Faro, Portugal
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Henrique L. Gomes;
Henrique L. Gomes
2
Universidade do Algarve
, FCT, 8000-139 Faro, Portugal
3
IT-Instituto de Telecomunicações
, Av. Rovisco, Pais, 1, 1049-001 Lisboa, Portugal
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Pedro Barquinha;
Pedro Barquinha
1Department of Materials Science, i3N/CENIMAT, Faculty of Science and Technology,
Universidade NOVA de Lisboa and CEMOP/UNINOVA
, Campus de Caparica, 2829-516 Caparica, Portugal
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Jorge Martins;
Jorge Martins
1Department of Materials Science, i3N/CENIMAT, Faculty of Science and Technology,
Universidade NOVA de Lisboa and CEMOP/UNINOVA
, Campus de Caparica, 2829-516 Caparica, Portugal
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Ana Rovisco
;
Ana Rovisco
1Department of Materials Science, i3N/CENIMAT, Faculty of Science and Technology,
Universidade NOVA de Lisboa and CEMOP/UNINOVA
, Campus de Caparica, 2829-516 Caparica, Portugal
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Joana V. Pinto;
Joana V. Pinto
1Department of Materials Science, i3N/CENIMAT, Faculty of Science and Technology,
Universidade NOVA de Lisboa and CEMOP/UNINOVA
, Campus de Caparica, 2829-516 Caparica, Portugal
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Rodrigo Martins;
Rodrigo Martins
1Department of Materials Science, i3N/CENIMAT, Faculty of Science and Technology,
Universidade NOVA de Lisboa and CEMOP/UNINOVA
, Campus de Caparica, 2829-516 Caparica, Portugal
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Elvira Fortunato
Elvira Fortunato
1Department of Materials Science, i3N/CENIMAT, Faculty of Science and Technology,
Universidade NOVA de Lisboa and CEMOP/UNINOVA
, Campus de Caparica, 2829-516 Caparica, Portugal
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Asal Kiazadeh
1,2
Henrique L. Gomes
2,3
Pedro Barquinha
1
Jorge Martins
1
Ana Rovisco
1
Joana V. Pinto
1
Rodrigo Martins
1
Elvira Fortunato
1
1Department of Materials Science, i3N/CENIMAT, Faculty of Science and Technology,
Universidade NOVA de Lisboa and CEMOP/UNINOVA
, Campus de Caparica, 2829-516 Caparica, Portugal
2
Universidade do Algarve
, FCT, 8000-139 Faro, Portugal
3
IT-Instituto de Telecomunicações
, Av. Rovisco, Pais, 1, 1049-001 Lisboa, Portugal
Appl. Phys. Lett. 109, 051606 (2016)
Article history
Received:
May 23 2016
Accepted:
July 21 2016
Citation
Asal Kiazadeh, Henrique L. Gomes, Pedro Barquinha, Jorge Martins, Ana Rovisco, Joana V. Pinto, Rodrigo Martins, Elvira Fortunato; Improving positive and negative bias illumination stress stability in parylene passivated IGZO transistors. Appl. Phys. Lett. 1 August 2016; 109 (5): 051606. https://doi.org/10.1063/1.4960200
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